Improvement of ultrathin gate oxide by a novel rapid thermal oxidation process with in-situ steam generation

1999 ◽  
Author(s):  
Mo-Chium Yu ◽  
Syun-Ming Jang ◽  
C. H. Diaz ◽  
C. H. Yu ◽  
S. C. Sun ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gate Oxide ◽  
Steam Generation ◽  
Rapid Thermal Oxidation ◽  
Thermal Oxidation Process

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Steam Generation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

SURFACE MORPHOLOGY AND X-RAY DIFFRACTION ANALYSIS FOR SILICON NANOCRYSTAL-BASED HETEROSTRUCTURES

2013 ◽  
Vol 20 (05) ◽  
pp. 1350046 ◽  
Author(s):  
EVAN T. SALIM
Keyword(s):  
Surface Morphology ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Oxidation Temperature ◽  
Silicon Nanocrystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rapid Thermal Oxidation ◽  
O Phase ◽  
Thermal Oxidation Process

In this work, we studied the effect of rapid thermal oxidation process on the structural and surface morphology of silicon nanocrystal-based heterostructures. PLD technique was employed in combination with rapid thermal oxidation process to form multilayers heterostructures. Results show the dependence of the surface roughness and structure on the oxidation temperature. Best surface morphology was achieved at 723 K oxidation temperature, at which, the X-ray diffraction result ensured the formation of the Cu 2 O phase at (111) and (002) diffraction plain with uniform porous surface.

Study on Thermal Oxidation of Asphalt Fractions by In Situ FTIR Analysis

2010 ◽  
Vol 160-162 ◽  
pp. 330-335 ◽  
Author(s):  
Xue Juan Cao ◽  
Yun Bo Lei ◽  
Wei Wang
Keyword(s):  
Fourier Transform ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Fourier Transform Infrared ◽  
Nitrogen Atmosphere ◽  
Ftir Analysis ◽  
Air Atmosphere ◽  
Aging Phenomenon ◽  
Thermal Oxidation Process

Base asphalt can be separated into four fractions, which are saturates, naphetene aromatics, polar-aromatics and asphaltenes. The thermal oxidation process of each fraction was studied by in-situ Fourier transform infrared (FTIR) analysis in different atmospheres in this paper. And the results show that each fraction in nitrogen atmosphere has no obvious aging phenomenon, while in oxygen and air atmosphere, only saturates and naphetene aromatics have a drastic change because of thermal oxidation, and polar-aromatics and asphaltenes almost keep unchanged. When adding 2.5% antioxidant 300 or 5% SBS respectively to saturates and naphthene aromatics, it can be found from the results that the degree of thermal oxidation of these two components decrease.

Relationship between the structure and the thermal oxidation process of coke powders

Refractories ◽  
1992 ◽  
Vol 33 (1-2) ◽  
pp. 14-18
Author(s):  
Yu. A. Pirogov ◽  
P. Ya. Pustovar ◽  
I. A. Kutuzyan ◽  
Yu. F. Boiko
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1357-1360 ◽  
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Sandro Solmi ◽  
M. Bersani ◽  
L. Vanzetti
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Sign in / Sign up

Export Citation Format

Share Document