OPDIMA: large-area CCD-based x-ray image sensor for spot imaging and biopsy control in mammography

1999 ◽  
Author(s):  
Stefan J. Thunberg ◽  
Hartmut Sklebitz ◽  
Bengt Ekdahl ◽  
Lothar Baetz ◽  
Anders Lundin ◽  
...  
Keyword(s):  
Image Sensor ◽  
Large Area ◽  
X Ray

Novel large-area MIS-type x-ray image sensor for digital radiography

1998 ◽  
Author(s):  
Toshio Kameshima ◽  
Noriyuki Kaifu ◽  
Eiichi Takami ◽  
Masakazu Morishita ◽  
Tatsuya Yamazaki
Keyword(s):  
Digital Radiography ◽  
Image Sensor ◽  
Large Area ◽  
X Ray

Low noise, large area CMOS x-ray image sensor for C.T. application

2004 ◽  
Author(s):  
A. Kemna ◽  
W. Brockherde ◽  
B. Hosticka ◽  
E. Ozkan ◽  
F. Morales-Serrano ◽  
...  
Keyword(s):  
Image Sensor ◽  
Low Noise ◽  
Large Area ◽  
X Ray

New large-area x-ray image sensor

1998 ◽  
Author(s):  
Donald R. Ouimette ◽  
Sol Nudelman ◽  
Richard S. Aikens
Keyword(s):  
Image Sensor ◽  
Large Area ◽  
X Ray ◽  
Area X

Large-area MEMS fabrication with thick SU-8 photoresist applied to an x-ray image sensor array

2000 ◽  
Author(s):  
Jurgen H. Daniel ◽  
Brent S. Krusor ◽  
Raj B. Apte ◽  
Robert A. Street ◽  
Adela Goredema ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
Large Area ◽  
X Ray ◽  
Mems Fabrication ◽  
Image Sensor Array

Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

2007 ◽  
Vol 989 ◽  
Author(s):  
Manuela Vieira ◽  
Yuri Vygranenko ◽  
Miguel Fernandes ◽  
Paula Louro ◽  
Pedro Sanguino ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Image Sensor ◽  
Semiconductor Layer ◽  
Charge Carrier Transport ◽  
Large Area ◽  
X Ray ◽  
Switching Mode ◽  
Area X

AbstractThis paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays

2001 ◽  
Vol 19 (4) ◽  
pp. 1219-1223 ◽  
Author(s):  
J. H. Daniel ◽  
B. Krusor ◽  
R. B. Apte ◽  
M. Mulato ◽  
K. Van Schuylenbergh ◽  
...  
Keyword(s):  
Mechanical System ◽  
Sensor Arrays ◽  
Micro Electro Mechanical System ◽  
Image Sensor ◽  
Fabrication Technology ◽  
Large Area ◽  
X Ray ◽  
Area X

MEMS Materials and Fabrication Technology on Large Areas: The Example of an X-ray Imager

2000 ◽  
Vol 657 ◽  
Author(s):  
J.H. Daniel ◽  
B. Krusor ◽  
R. Lau ◽  
J.P. Lu ◽  
Y. Wang ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Image Sensor ◽  
Large Area ◽  
Interlayer Dielectric ◽  
X Ray ◽  
Glass Substrates ◽  
Potential Applications ◽  
Mems Technology ◽  
Thick Photoresist ◽  
Silicon Based

ABSTRACTMicromachining has potential applications for large area image sensors and displays, but conventional MEMS technology, based on crystalline silicon wafers cannot be used. Instead, large area devices use deposited films on glass substrates. This presents many challenges for MEMS, both as regards materials for micro-machined structures and the integration with large area electronic devices. We are exploring the novel thick photoresist SU-8, as well as plating techniques for the fabrication of large area MEMS. As an example of its application, we have applied this MEMS technology to improve the performance of an amorphous silicon based image sensor array. SU-8 is explored as the structural material for the X-ray conversion screen and as a thick interlayer dielectric for the thin film readout electronics of the imager.

Amorphous Silicon Sensor Arrays for X-Ray and Document Imaging

1997 ◽  
Vol 487 ◽  
Author(s):  
R. A. Street ◽  
R. B. Apte ◽  
S. E. Ready ◽  
R. L. Weisfield ◽  
P. Nylen
Keyword(s):  
High Resolution ◽  
Medical Imaging ◽  
Amorphous Silicon ◽  
Present State ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Large Area ◽  
Flat Panel ◽  
X Ray ◽  
Silicon Sensor

AbstractLarge area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×1 6”).

Fast signal transfer in a large-area X-ray CMOS image sensor

2014 ◽  
Vol 9 (08) ◽  
pp. P08011-P08011 ◽  
Author(s):  
M S Kim ◽  
D U Kang ◽  
D H Lee ◽  
H Kim ◽  
G Cho ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Large Area ◽  
Signal Transfer ◽  
X Ray ◽  
Area X
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