Large-area MEMS fabrication with thick SU-8 photoresist applied to an x-ray image sensor array

2000 ◽  
Author(s):  
Jurgen H. Daniel ◽  
Brent S. Krusor ◽  
Raj B. Apte ◽  
Robert A. Street ◽  
Adela Goredema ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
Large Area ◽  
X Ray ◽  
Mems Fabrication ◽  
Image Sensor Array

14‐3: Flexible Image Sensor Array Using IGZO TFT Backplane Technology for X‐ray Detector

2020 ◽  
Vol 51 (1) ◽  
pp. 184-187
Author(s):  
Rikiya Takita ◽  
Wataru Nakamura ◽  
Akinori Kubota ◽  
Fumiki Nakano ◽  
Kazuhide Tomiyasu ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
X Ray ◽  
Igzo Tft ◽  
Image Sensor Array

Flexible Image Sensor Array Using IGZO TFT Backplane Technology for X-ray Detector

2020 ◽  
pp. 921
Author(s):  
Rikiya Takita ◽  
Wataru Nakamura ◽  
Akinori Kubota ◽  
Fumiki Nakano ◽  
Kazuhide Tomiyasu ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
X Ray ◽  
Igzo Tft ◽  
Image Sensor Array

scholarly journals Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Seongin Hong ◽  
Nicolò Zagni ◽  
Sooho Choo ◽  
Na Liu ◽  
Seungho Baek ◽  
...  
Keyword(s):  
Sensor Array ◽  
Transition Metal Dichalcogenides ◽  
Image Sensor ◽  
Large Area ◽  
Image Sensing ◽  
Active Pixel ◽  
Area Growth ◽  
Growth Method ◽  
Pixel Image ◽  
Image Sensor Array

AbstractVarious large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.

Novel large-area MIS-type x-ray image sensor for digital radiography

1998 ◽  
Author(s):  
Toshio Kameshima ◽  
Noriyuki Kaifu ◽  
Eiichi Takami ◽  
Masakazu Morishita ◽  
Tatsuya Yamazaki
Keyword(s):  
Digital Radiography ◽  
Image Sensor ◽  
Large Area ◽  
X Ray

71‐2: Novel Optical Image Sensor Array Using LTPS‐TFT Backplane Technology as Fingerprint Recognition

2019 ◽  
Vol 50 (1) ◽  
pp. 1004-1006 ◽  
Author(s):  
Bozhi Liu ◽  
Xiaoqi Shi ◽  
Shoujin Cai ◽  
Xuanxian Cai ◽  
Xuexin Lan ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
Optical Image ◽  
Fingerprint Recognition ◽  
Image Sensor Array

56.2: Embedded Fingerprint/Image Sensor Array Panel using a‐Si TFT photo‐sensor and Four‐Mask Halftone Process Technology

2019 ◽  
Vol 50 (S1) ◽  
pp. 613-616
Author(s):  
An-Thung Cho ◽  
Zhen Liu ◽  
Kai-jun Liu ◽  
Feng-yun Yang ◽  
Qiong-hua Mo ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
Process Technology ◽  
Fingerprint Image ◽  
Photo Sensor ◽  
Image Sensor Array

Low noise, large area CMOS x-ray image sensor for C.T. application

2004 ◽  
Author(s):  
A. Kemna ◽  
W. Brockherde ◽  
B. Hosticka ◽  
E. Ozkan ◽  
F. Morales-Serrano ◽  
...  
Keyword(s):  
Image Sensor ◽  
Low Noise ◽  
Large Area ◽  
X Ray
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