Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs

1999 ◽  
Author(s):  
Gong-Ru Lin ◽  
Ci-Ling Pan
Keyword(s):  
Absorption Spectrum ◽  
Thermal Annealing ◽  
Band Edge ◽  
Edge Absorption ◽  
Ion Implanted

scholarly journals Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

2021 ◽  
Vol 538 ◽  
pp. 147803
Author(s):  
Valerio Apicella ◽  
Teslim Ayinde Fasasi ◽  
Hon Fai Wong ◽  
Dennis C.W. Leung ◽  
Antonio Ruotolo
Keyword(s):  
Absorption Spectrum ◽  
Near Infrared ◽  
Band Edge ◽  
Infrared Band ◽  
Edge Absorption

Pulsed thermal annealing of ion‐implanted silicon

1983 ◽  
Vol 54 (5) ◽  
pp. 2413-2418 ◽  
Author(s):  
P. D. Scovell ◽  
E. J. Spurgin
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

The Effects of Composition on the Spectral Loss Characteristics of SiGe Planar Waveguide Structures

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar
Keyword(s):  
Optical Properties ◽  
Planar Waveguide ◽  
Waveguide Structure ◽  
Propagation Loss ◽  
Band Edge ◽  
Optical Confinement ◽  
Structural And Optical Properties ◽  
Edge Absorption

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.

Effect of rapid thermal annealing on carrier lifetimes of arsenic‐ion‐implanted GaAs

1996 ◽  
Vol 69 (7) ◽  
pp. 996-998 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
Feruz Ganikhanov ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetimes ◽  
Ion Implanted

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

2006 ◽  
pp. 847-850
Author(s):  
Jaime A. Freitas ◽  
Kenneth A. Jones ◽  
Michael A. Derenge ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

1993 ◽  
Vol 63 (8) ◽  
pp. 1125-1127 ◽  
Author(s):  
N. Yu ◽  
K. B. Ma ◽  
C. Kirschbaum ◽  
K. Varahramyan ◽  
W. K. Chu
Keyword(s):  
Thermal Annealing ◽  
Electrical Activation ◽  
Ion Implanted
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