X-ray optics of in-situ synchrotron topography studies of the early stages of relaxation in epitaxial InGaAs on GaAs

1998 ◽  
Author(s):  
Brian K. Tanner ◽  
Andrew M. Keir ◽  
Peter Moeck ◽  
Colin R. Whitehouse ◽  
Gareth Lacey ◽  
...  
Keyword(s):  
Ray Optics ◽  
X Ray ◽  
Early Stages

In-situ metrology for adaptive x-ray optics with an in-position LTP system in the soft x-ray beamline

2020 ◽  
Author(s):  
Shang-Wei Lin ◽  
Duan-Jen Wang ◽  
Chih-Yu Hua ◽  
Hok-Sum Fung ◽  
Ming-Ying Hsu ◽  
...  
Keyword(s):  
Ray Optics ◽  
X Ray ◽  
In Situ Metrology

Ion Beam Study of Early Stages of Growth of GaN films on Sapphire

2002 ◽  
Vol 743 ◽  
Author(s):  
Eugen M. Trifan ◽  
David C. Ingram
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Ex Situ ◽  
Crystallographic Axis ◽  
In Situ Characterization ◽  
X Ray ◽  
Ion Channeling ◽  
Stages Of Growth ◽  
Early Stages

ABSTRACTAn innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.

Doubly curved crystal (DCC) X-ray optics and applications

2002 ◽  
Vol 17 (2) ◽  
pp. 99-103 ◽  
Author(s):  
Zewu Chen ◽  
Walter M. Gibson
Keyword(s):  
Thin Films ◽  
Low Power ◽  
X Rays ◽  
Enabling Technology ◽  
Ray Optics ◽  
X Ray ◽  
Composition And Structure ◽  
Composition Structure ◽  
Doubly Curved

Doubly curved crystal (DCC) X-ray optics provide an enabling technology for new portable, remote, and in situ applications of monochromatic X-rays for composition and structure analysis of amorphous, polycrystalline, and crystalline solids. Femtogram sensitivity for surface contamination, parts-per-billion (ppb) impurity levels for solids, and composition, structure and uniformity of thin films with compact, low power (20–50 W) source optic combinations are possible.

Monitoring early stages of silver particle formation in a polymer solution by in situ and time resolved small angle X-ray scattering

Nanoscale ◽  
2010 ◽  
Vol 2 (11) ◽  
pp. 2447 ◽  
Author(s):  
Gaetano Campi ◽  
Alessandra Mari ◽  
Heinz Amenitsch ◽  
Augusto Pifferi ◽  
Carla Cannas ◽  
...  
Keyword(s):  
Polymer Solution ◽  
Small Angle ◽  
Silver Particle ◽  
Particle Formation ◽  
Time Resolved ◽  
X Ray ◽  
Early Stages ◽  
X Ray Scattering ◽  
Ray Scattering

Fiber-optic based in situ atomic spectroscopy for manufacturing of x-ray optics

2016 ◽  
Author(s):  
George Atanasoff ◽  
Christopher J. Metting ◽  
Hasso von Bredow
Keyword(s):  
Fiber Optic ◽  
Atomic Spectroscopy ◽  
Ray Optics ◽  
X Ray
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