Thin-film transistor array technology for high-performance direct-conversion x-ray sensors

1998 ◽  
Author(s):  
Willem den Boer ◽  
Steven Aggas ◽  
Young H. Byun ◽  
Tieer Gu ◽  
Johnny Q. Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Direct Conversion ◽  
X Ray ◽  
Array Technology

X-ray imaging characteristics of a direct conversion detector using selenium and thin film transistor array

1997 ◽  
Author(s):  
Brian Rodricks ◽  
Denny L. Lee ◽  
Lawrence K. Cheung ◽  
Lothar S. Jeromin ◽  
Eugene F. Palecki
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Direct Conversion ◽  
X Ray ◽  
Imaging Characteristics ◽  
X Ray Imaging

scholarly journals High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1871 ◽  
Author(s):  
Rihui Yao ◽  
Xiaoqing Li ◽  
Zeke Zheng ◽  
Xiaochen Zhang ◽  
Mei Xiong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Al2o3 Layer ◽  
X Ray ◽  
Indium Zinc Oxide

In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach.

Selenophene-containing Semiconducting Polymers for High-performance Ambipolar Thin Film Transistor Application

Polymer ◽  
2021 ◽  
pp. 123685
Author(s):  
Yanjun Guo ◽  
Mingchao Xiao ◽  
Xi Zhang ◽  
Jiayao Duan ◽  
Shengyu Cong ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Semiconducting Polymers

Area and Energy Efficient High-Performance ZnO Wavy Channel Thin-Film Transistor

2014 ◽  
Vol 61 (9) ◽  
pp. 3223-3228 ◽  
Author(s):  
Amir N. Hanna ◽  
Mohamed T. Ghoneim ◽  
Rabab R. Bahabry ◽  
Aftab M. Hussain ◽  
Hossain M. Fahad ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Efficient ◽  
High Performance ◽  
Thin Film Transistor ◽  
Wavy Channel
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