Time-resolved photoluminescence of dense electron-hole plasmas in In-Ga-As-P films

1987 ◽  
Vol 35 (5) ◽  
pp. 2321-2329 ◽  
Author(s):  
A. J. Taylor ◽  
J. M. Wiesenfeld
Keyword(s):  
Electron Hole ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

EXCITONIC SIDE BANDS OF INNER-SHELL EXCITATIONS IN RARE GAS SOLIDS

2002 ◽  
Vol 09 (02) ◽  
pp. 1333-1338 ◽  
Author(s):  
S. VIELHAUER ◽  
M. KIRM ◽  
V. KISAND ◽  
E. NEGODIN ◽  
E. SOMBROWSKI ◽  
...  
Keyword(s):  
Free Exciton ◽  
Rare Gas ◽  
Excitation Threshold ◽  
Energy Position ◽  
Excitation Spectra ◽  
Electron Hole ◽  
Time Resolved ◽  
Ionization Limit ◽  
Time Resolved Photoluminescence ◽  
Hole Recombination

Valence-exciton luminescence under inner-shell excitation of the rare gas solids Xe, Kr, and Ar has been measured using time-resolved photoluminescence. Two different processes for exciton creation can be distinguished: creation of "prompt" excitons immediately after excitation (within the experimental time resolution), and creation of "delayed" excitons through electron–hole recombination. The decay structure of the exciton emission in the range of inner-shell excitation is characterized by the coexistence of the two processes. Time-resolved excitation spectra near the 2p edge in Ar, the 3d edge in Kr, and the 4d edge in Xe are discussed. The process of prompt exciton creation is strongly enhanced above an excitation threshold at the energy position of the ionization limit of the core state plus the energy of the valence free exciton.

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Optical Properties of Ingan/GaN Multi Quantum Well Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
J. P. Bergman ◽  
N. Saksulv ◽  
J. Dalfors ◽  
P. O. Holtz ◽  
B. Monemar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Rates ◽  
Energy Position ◽  
Electron Hole ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Lower Energy Band ◽  
Time Resolved Photoluminescence ◽  
Multi Quantum Well

AbstractA set of GaN/InGaN multiple quantum wells (QWs) with well thickness 30 Å and barrier thickness 60 Å were grown by MOCVD on sapphire substrates. The n-type Si doping of the InGaN QWs was varied, in order to produce a different electron concentration in the QWs for the different samples. Optical spectra were obtained by time resolved photoluminescence spectroscopy. The data show weak excitonic spectra from the QWs as well as a broad deeper emission with a much stronger intensity. The spectral shape becomes narrower and the energy position shifts to higher energies with increasing doping. The two different emissions are not easily separated in CW or time integrated spectra, but are clearly observed in a time resolved spectral measurement due to their different recombination rates. The deeper emission has a long and non-exponential decay, with an average decay time in the order of several hundred nanoseconds. The higher energy exciton emission has a much faster decay of about 1 ns. The lower energy band is tentatively explained as due to separately localized electron-hole (e-h) pairs in the QW.

Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence

1998 ◽  
Author(s):  
Vladimir G. Litovchenko ◽  
Dmytro V. Korbutyak ◽  
Sergiy G. Krylyuk ◽  
Holger T. Grahn ◽  
R. Klann ◽  
...  
Keyword(s):  
Electron Hole ◽  
Time Resolved ◽  
Short Period ◽  
Time Resolved Photoluminescence

The Formation of Radiative Defects at GaAs/GaInP Interface

1995 ◽  
Vol 417 ◽  
Author(s):  
Kazuo Uchida ◽  
Takayuki Arai ◽  
Koh Matsumoto
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Time Resolved ◽  
Organic Vapor ◽  
Spatially Distributed ◽  
Electron Hole Pair ◽  
Metal Organic ◽  
Related Defect ◽  
Time Resolved Photoluminescence

AbstractWe report the optical characteristics of 100 A˚ thick GaAs/Ga0.521n0.48P single quantum wells grown by Metal Organic Vapor Phase Epitaxy. We have confirmed from the 77 K photoluminescence (PL) that an optimum growth sequence is necessary to achieve the emission from the well (1.52 eV), otherwise only the deep emission band (1.46 eV) is observed. From the time-resolved photoluminescence and temperature dependent PL measurements, we assign that this 1.46 eV deep emission is a recombination of electron-hole pair in a vacancy-related defect which is spatially distributed at the imperfect GaAs/Ga 0.521n0.48P interface.

Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems

2002 ◽  
Vol 743 ◽  
Author(s):  
Aurelien Morel ◽  
Pierre Lefebvre ◽  
Thierry Taliercio ◽  
Bernard Gil ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Scaling Law ◽  
Quantum Systems ◽  
Electron Hole ◽  
Microscopic Description ◽  
Time Resolved ◽  
Electron Hole Pair ◽  
Time Resolved Photoluminescence ◽  
Localization Of Electrons

ABSTRACTRecombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum wells and quantum boxes of various sizes while their decay time varies over several orders of magnitude. To explain these results, we propose an original model for electron-hole pair recombination in these systems, combining the effects of internal electric fields and of carrier localization on a nanometer-scale. These two intricate effects imply a separate localization of electrons and holes. Such a microscopic description accounts very well for both the decays shape and the scaling law.

INNER-SHELL TRANSITIONS AND SECONDARY EXCITONS IN SOLID XE AND KR

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3695-3699 ◽  
Author(s):  
S. VIELHAUER ◽  
E. GMINDER ◽  
M. KIRM ◽  
V. KISAND ◽  
E. NEGODIN ◽  
...  
Keyword(s):  
Time Window ◽  
Free Exciton ◽  
Threshold Energy ◽  
Rare Gas ◽  
Excitation Spectra ◽  
Electron Hole ◽  
Time Resolved ◽  
Short Time Window ◽  
Short Time ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of the exciton emission in rare gas solids has been measured for excitation in the range of inner-shell transitions. The excitons are created both 'promptly' (within the experimental time resolution) and 'delayed' through electron-hole recombination. Excitation spectra at the 4d edge in Xe and the 3d edge in Kr are discussed. An outstanding feature of the time resolved spectra is the strong resonance that appears in a short time window above a threshold energy, which is the sum of the ionisation energy of the core level and the energy of the (valence) free exciton.

Observation of the electron-hole liquid inSi1−xGex/Siquantum wells by steady-state and time-resolved photoluminescence measurements

2010 ◽  
Vol 82 (11) ◽  
Author(s):  
V. S. Bagaev ◽  
V. S. Krivobok ◽  
S. N. Nikolaev ◽  
A. V. Novikov ◽  
E. E. Onishchenko ◽  
...  
Keyword(s):  
Steady State ◽  
Electron Hole ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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