Investigations on beam profiles and beam propagation of astigmatic laser diodes with an optical near-field microscope

1997 ◽  
Author(s):  
Chunqing Gao ◽  
Ari T. Friberg ◽  
R. Motzkus ◽  
Norbert Reng
Keyword(s):  
Near Field ◽  
Laser Diodes ◽  
Beam Propagation

Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

2014 ◽  
Vol 105 (17) ◽  
pp. 173501 ◽  
Author(s):  
J. Jeschke ◽  
U. Zeimer ◽  
L. Redaelli ◽  
S. Einfeldt ◽  
M. Kneissl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Near Field ◽  
Laser Diodes ◽  
Lasing Threshold

Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste

2012 ◽  
Vol 134 (4) ◽  
Author(s):  
Yi Yan ◽  
Xu Chen ◽  
Xingsheng Liu ◽  
Yunhui Mei ◽  
Guo-Quan Lu
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Near Field ◽  
Laser Diodes ◽  
Acoustic Microscopy ◽  
High Power Laser ◽  
Power Laser ◽  
Power Semiconductor ◽  
Die Bonding ◽  
Nanosilver Paste

Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.

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