Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

2014 ◽  
Vol 105 (17) ◽  
pp. 173501 ◽  
Author(s):  
J. Jeschke ◽  
U. Zeimer ◽  
L. Redaelli ◽  
S. Einfeldt ◽  
M. Kneissl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Near Field ◽  
Laser Diodes ◽  
Lasing Threshold

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

Near-field photoreflectance spectroscopy of quantum well structures

2001 ◽  
Vol 78 (16) ◽  
pp. 2306-2308
Author(s):  
Yong-Hoon Cho ◽  
Dai-Sik Kim ◽  
Wonho Jhe
Keyword(s):  
Quantum Well ◽  
Near Field ◽  
Quantum Well Structures ◽  
Photoreflectance Spectroscopy

scholarly journals The influence of quantum well geometry on wavelength of AlInGaAs/InP laser diodes

2020 ◽  
Vol 1695 ◽  
pp. 012079
Author(s):  
A Chelny ◽  
Yu Akhmerov ◽  
A Savchuk ◽  
A Zharkova ◽  
O Rabinovich ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes

1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1988 ◽  
Vol 24 (16) ◽  
pp. 1045 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
N. Henmi ◽  
T. Sasaki ◽  
H. Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser
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