Pulsed laser damage on ZnS optics

1997 ◽  
Author(s):  
Christophe Hubert-Habart ◽  
Enrique Fontana ◽  
Vincent Baudinaud
Keyword(s):  
1975 ◽  
Vol 7 (3) ◽  
pp. 215-226 ◽  
Author(s):  
B. Luther-Davies ◽  
R. C. Smith ◽  
R. Wyatt
Keyword(s):  

2018 ◽  
Vol 45 (1) ◽  
pp. 0104002
Author(s):  
单翀 Shan Chong ◽  
赵元安 Zhao Yuan′an ◽  
张喜和 Zhang Xihe ◽  
胡国行 Hu Guohang ◽  
王岳亮 Wang Yueliang ◽  
...  

1985 ◽  
Vol 125 (1-2) ◽  
pp. 143-155 ◽  
Author(s):  
M.R. Lange ◽  
J.K. McIver ◽  
A.H. Guenther

1980 ◽  
Vol 19 (3) ◽  
pp. 451 ◽  
Author(s):  
J. O. Porteus ◽  
W. J. Choyke ◽  
R. A. Hoffman

1990 ◽  
Vol 201 ◽  
Author(s):  
S. S. Goldenberg ◽  
J. P. Long ◽  
M. N. Kabler

AbstractThe pulsed-laser induced photochemical production of metallic Ga islands on the surface of GaAs cleaved, irradiated, and studied in ultrahigh vacuum (UHV) is documented through photoelectron spectroscopy and subsequent scanning electron microscopy. Ga islands are detected for laser fluences as low as 1 mJ/cm2, far below those previously reported for modification of GaAs, and for which the temperature rise is negligible.


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