Pulsed laser damage of proustite

1975 ◽  
Vol 7 (3) ◽  
pp. 215-226 ◽  
Author(s):  
B. Luther-Davies ◽  
R. C. Smith ◽  
R. Wyatt
Keyword(s):  
Pulsed Laser ◽  
Laser Damage

Study on Laser Damage Threshold of Optical Element Surface Based on Gaussian Pulsed Laser Spatial Resolution

2018 ◽  
Vol 45 (1) ◽  
pp. 0104002
Author(s):  
单翀 Shan Chong ◽  
赵元安 Zhao Yuan′an ◽  
张喜和 Zhang Xihe ◽  
胡国行 Hu Guohang ◽  
王岳亮 Wang Yueliang ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Pulsed Laser ◽  
Optical Element ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Laser Damage

Pulsed laser damage on ZnS optics

1997 ◽  
Author(s):  
Christophe Hubert-Habart ◽  
Enrique Fontana ◽  
Vincent Baudinaud
Keyword(s):  
Pulsed Laser ◽  
Laser Damage

Pulsed laser damage in thin film coatings: Fluorides and oxides

1985 ◽  
Vol 125 (1-2) ◽  
pp. 143-155 ◽  
Author(s):  
M.R. Lange ◽  
J.K. McIver ◽  
A.H. Guenther
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Laser Damage ◽  
Film Coatings ◽  
Thin Film Coatings

Pulsed laser damage characteristics of vapor-deposited copper mirrors on silicon carbide substrates

1980 ◽  
Vol 19 (3) ◽  
pp. 451 ◽  
Author(s):  
J. O. Porteus ◽  
W. J. Choyke ◽  
R. A. Hoffman
Keyword(s):  
Silicon Carbide ◽  
Pulsed Laser ◽  
Laser Damage ◽  
Damage Characteristics

Photoemission Study of Low-Fluence, Non-Thermal Laser Damage of UHV-Cleaved Gallium Arsenide (110)

1990 ◽  
Vol 201 ◽  
Author(s):  
S. S. Goldenberg ◽  
J. P. Long ◽  
M. N. Kabler
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Gallium Arsenide ◽  
Temperature Rise ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Damage ◽  
Laser Fluences ◽  
Photoemission Study ◽  
Scanning Electron

AbstractThe pulsed-laser induced photochemical production of metallic Ga islands on the surface of GaAs cleaved, irradiated, and studied in ultrahigh vacuum (UHV) is documented through photoelectron spectroscopy and subsequent scanning electron microscopy. Ga islands are detected for laser fluences as low as 1 mJ/cm2, far below those previously reported for modification of GaAs, and for which the temperature rise is negligible.

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