Photoemission Study of Low-Fluence, Non-Thermal Laser Damage of UHV-Cleaved Gallium Arsenide (110)
Keyword(s):
AbstractThe pulsed-laser induced photochemical production of metallic Ga islands on the surface of GaAs cleaved, irradiated, and studied in ultrahigh vacuum (UHV) is documented through photoelectron spectroscopy and subsequent scanning electron microscopy. Ga islands are detected for laser fluences as low as 1 mJ/cm2, far below those previously reported for modification of GaAs, and for which the temperature rise is negligible.
2018 ◽
Vol 243
◽
pp. 00017
◽
2015 ◽
Vol 752-753
◽
pp. 1379-1383
2002 ◽
Vol 16
(28n29)
◽
pp. 4484-4486
2010 ◽
Vol 79
(2)
◽
pp. 494-500
◽
1994 ◽
Vol 33
(Part 2, No. 4B)
◽
pp. L563-L566
◽