Evaluation of the total dose and single event upset effects on JPEG/DPCM LSI device and 16Mb-DRAM for space application

1996 ◽  
Author(s):  
Masatoshi Tohno ◽  
Hideo Masuzawa ◽  
Yukio Sohma
1992 ◽  
Vol 39 (3) ◽  
pp. 413-417 ◽  
Author(s):  
C.S. Dyer ◽  
A.J. Sims ◽  
J. Farren ◽  
J. Stephen ◽  
C. Underwood

2012 ◽  
Vol 198-199 ◽  
pp. 1105-1109
Author(s):  
Xin Jie Zhou ◽  
Jing He Wei ◽  
Lei Lei Li

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.


1990 ◽  
Vol 19 (7) ◽  
pp. 689-697
Author(s):  
V. Zajic ◽  
K. Kloesel ◽  
D. Ngo ◽  
P. M. Kibuule ◽  
A. Oladipupo ◽  
...  

2006 ◽  
Vol 53 (4) ◽  
pp. 1772-1778 ◽  
Author(s):  
J.R. Schwank ◽  
M.R. Shaneyfelt ◽  
J.A. Felix ◽  
P.E. Dodd ◽  
J. Baggio ◽  
...  

Author(s):  
J. R. Schwank ◽  
M. R. Shaneyfelt ◽  
J. A. Felix ◽  
P. E. Dodd ◽  
V. Ferlet-Cavrois ◽  
...  

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