Research on single event upset effect of CMOS image sensor for space application

2019 ◽  
Author(s):  
Bo Wang ◽  
Ying Pan ◽  
Wei-xin Liu ◽  
Ze-bin Kong ◽  
Kun-shu Wang ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Application ◽  
Single Event Upset ◽  
Single Event

Proton, Electron, and Heavy Ion Single Event Effects on the HAS2 CMOS Image Sensor

2014 ◽  
Vol 61 (4) ◽  
pp. 1909-1917 ◽  
Author(s):  
Matthieu Beaumel ◽  
Dominique Herve ◽  
Dirk Van Aken ◽  
Pierre Pourrouquet ◽  
Marc Poizat
Keyword(s):  
Cmos Image Sensor ◽  
Heavy Ion ◽  
Image Sensor ◽  
Single Event ◽  
Single Event Effects

scholarly journals Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor

2016 ◽  
Vol 24 (4) ◽  
pp. 4155 ◽  
Author(s):  
Futa Mochizuki ◽  
Keiichiro Kagawa ◽  
Shin-ichiro Okihara ◽  
Min-Woong Seo ◽  
Bo Zhang ◽  
...  
Keyword(s):  
High Speed ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Single Event ◽  
Single Event Transient ◽  
Ultra High Speed ◽  
Transient Imaging

A SEE Hardened Read-Out Circuit of EEPROM for Space Application

2012 ◽  
Vol 198-199 ◽  
pp. 1105-1109
Author(s):  
Xin Jie Zhou ◽  
Jing He Wei ◽  
Lei Lei Li
Keyword(s):  
Circuit Design ◽  
Space Application ◽  
Single Event Upset ◽  
Single Event ◽  
Single Event Transient ◽  
Single Event Effect ◽  
Radiation Hardened

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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