Line width roughness variation and printing failures caused by stochastic effect at extreme-ultraviolet exposure

Application of machine learning to stochastic effect analysis of chemically amplified resists used for extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abe802 ◽

2021 ◽

Author(s):

Kazuki Azumagawa ◽

Takahiro KOZAWA

Keyword(s):

Machine Learning ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Effect Analysis ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Theoretical study of relationships among resolution, line width roughness, and sensitivity of chemically amplified extreme ultraviolet resists with photodecomposable quenchers

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.116501 ◽

2016 ◽

Vol 55 (11) ◽

pp. 116501

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Line Width ◽

Theoretical Study ◽

Extreme Ultraviolet ◽

Chemically Amplified

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Estimation of diffusion lengths of acid and quencher in chemically amplified resist on the basis of extreme ultraviolet exposure results

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2787867 ◽

2007 ◽

Vol 25 (6) ◽

pp. 2114 ◽

Cited By ~ 3

Author(s):

Yuusuke Tanaka ◽

Yukiko Kikuchi ◽

DooHoon Goo ◽

Hiroaki Oizumi ◽

Iwao Nishiyama

Keyword(s):

Extreme Ultraviolet ◽

Ultraviolet Exposure ◽

Chemically Amplified ◽

Chemically Amplified Resist

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An estimation of line width roughness of photoresists due to photon shot noise for extreme ultraviolet lithography using the percolation model

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab06bc ◽

2019 ◽

Vol 58 (5) ◽

pp. 055002 ◽

Cited By ~ 3

Author(s):

Akira Sasaki ◽

Masahiko Ishino ◽

Masaharu Nishikino

Keyword(s):

Line Width ◽

Shot Noise ◽

Extreme Ultraviolet ◽

Percolation Model ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.086504 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086504 ◽

Cited By ~ 25

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.086504 ◽

2012 ◽

Vol 51 ◽

pp. 086504 ◽

Cited By ~ 10

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.076502 ◽

2013 ◽

Vol 52 (7R) ◽

pp. 076502 ◽

Cited By ~ 8

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Effects of dose shift on line width, line edge roughness, and stochastic defect generation in chemically amplified extreme ultraviolet resist with photodecomposable quencher

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.016503 ◽

2014 ◽

Vol 54 (1) ◽

pp. 016503

Author(s):

Takahiro Kozawa

Keyword(s):

Line Width ◽

Extreme Ultraviolet ◽

Line Edge Roughness ◽

Defect Generation ◽

Chemically Amplified ◽

Edge Roughness ◽

On Line

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Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.016502 ◽

2014 ◽

Vol 54 (1) ◽

pp. 016502 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa

Keyword(s):

Line Width ◽

Extreme Ultraviolet ◽

Diffusion Constant ◽

Exposure Dose ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Edge Roughness

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Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4945806 ◽

2016 ◽

Vol 34 (4) ◽

pp. 041602 ◽

Cited By ~ 4

Author(s):

Insung Kim ◽

JinSeok Heo ◽

Changmin Park ◽

Myeongsu Hwang ◽

Seong-Sue Kim ◽

...

Keyword(s):

Extreme Ultraviolet ◽

Performance Characterization ◽

Exposure System ◽

Ultraviolet Exposure ◽

Contrast Method

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