The interplay between bandgap renormalization and Burstein-Moss effect for multilayered Al:ZnO/ZnO metamaterial

2020 ◽  
Author(s):  
Bethany Campbell ◽  
Priscilla Kelly ◽  
Antonio Talamantes ◽  
Lyuba Kuznetsova
Keyword(s):  
Moss Effect

scholarly journals ZnAl2O4 decorated Al-doped ZnO tetrapodal 3D networks: microstructure, Raman and detailed temperature dependent photoluminescence analysis

2020 ◽  
Vol 2 (5) ◽  
pp. 2114-2126 ◽  
Author(s):  
Joana Rodrigues ◽  
Matthias Hoppe ◽  
Nabiha Ben Sedrine ◽  
Niklas Wolff ◽  
Viola Duppel ◽  
...  
Keyword(s):  
Peak Position ◽  
Temperature Dependent ◽  
Al Doping ◽  
3D Network ◽  
Doped Zno ◽  
3D Networks ◽  
Moss Effect ◽  
Temperature Dependent Photoluminescence

3D network of ZnO:Al tetrapods decorated with ZnAl2O4 particles were synthesised by FTS. Al-doping was confirmed by the broadening and shift of the peak position of the 14 K NBE emission and by the bandgap shift to higher energy due to a Burstein–Moss effect.

scholarly journals Edge Absorption of thin Films –Ga2O3

2015 ◽  
Vol 16 (2) ◽  
pp. 302-306
Author(s):  
O.M. Bordun ◽  
B.O. Bordun ◽  
V.B. Lushchanets ◽  
I.Yo. Kukharskyy
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Absorption Edge ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Hydrogen Atmosphere ◽  
Argon Atmosphere ◽  
Charge Carriers ◽  
Free Charge ◽  
Moss Effect

Fundamental absorption edge of b–Ga2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated, using the method of optical spectroscopy. It was ascertained that the optical band gap Eg increases from 4.60 to 4.65 eV after the heat treatment films in argon atmosphere and to 5.20 eV after the reduction of annealed films in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in b–Ga2O3 films after annealing and after reduction in hydrogen was estimated. It was found that the concentration of charge carriers after heat treatment in argon atmosphere is 7.30´1017 cm–3 and after reduction in hydrogen, is 2.62´1019 cm–3, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in thin films b–Ga2O3 after reduction in hydrogen is caused by Burstein-Moss effect.

scholarly journals Burstein Moss effect in nanocrystalline CaS : Ce

2011 ◽  
Vol 34 (4) ◽  
pp. 673-676 ◽  
Author(s):  
Geeta Sharma ◽  
Puja Chawla ◽  
S. P. Lochab ◽  
Nafa Singh
Keyword(s):  
Moss Effect

scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Nonlinear Refraction Due to Dynamical Burstein-Moss Effect in Lead Chalcogenides

1988 ◽  
Vol 149 (2) ◽  
pp. 739-746 ◽  
Author(s):  
P. P. Paskov ◽  
L. I. Pavlov ◽  
P. A. Atanasov
Keyword(s):  
Nonlinear Refraction ◽  
Lead Chalcogenides ◽  
Moss Effect

scholarly journals Burstein-Moss Effect Behind Au Surface Plasmon Enhanced Intrinsic Emission of ZnO Microdisks

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Qiuxiang Zhu ◽  
Junfeng Lu ◽  
Yueyue Wang ◽  
Feifei Qin ◽  
Zengliang Shi ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Intrinsic Emission ◽  
Moss Effect

Influence of Preferred Orientation in Indium Tin Oxide.

1992 ◽  
Vol 280 ◽  
Author(s):  
H. Taniguchi ◽  
T. Ushiro ◽  
Y. Okamoto ◽  
Y. Akagi ◽  
M. Koba
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystal Orientation ◽  
Carrier Density ◽  
Free Carrier ◽  
Electrical And Optical Properties ◽  
Sn Doping ◽  
Free Carrier Density ◽  
Doping Mechanism ◽  
Moss Effect

ABSTRACTWe investigated the electrical and optical properties, the chemical composition, the surface morphology and the crystallinity of sputtered Sn-doped In2O3 films deposited on different substrate positions. Both the electric conductivity and the optical transparency are related to the free carrier density and moreover the preferred crystal orientation. The former relation is attributed to the Burstein-Moss effect and the latter suggests the Sn doping mechanism.

Sign in / Sign up

Export Citation Format

Share Document