Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

New hole transport styrene polymers bearing highly π-extended conjugated side-chain moieties for high-performance solution-processable thermally activated delayed fluorescence OLEDs

2021 ◽  
Vol 12 (11) ◽  
pp. 1692-1699
Author(s):  
Ji Hye Lee ◽  
Jinhyo Hwang ◽  
Chai Won Kim ◽  
Amit Kumar Harit ◽  
Han Young Woo ◽  
...  
Keyword(s):  
High Performance ◽  
High Efficiency ◽  
Delayed Fluorescence ◽  
Hole Transport ◽  
Side Chain ◽  
Solution Processed ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated ◽  
Turn On ◽  
Solution Processable

New polystyrene-based polymers with high π-extended hole transport pendants were synthesized to obtain a low turn-on voltage and high efficiency in solution-processed green TADF-OLEDs.

scholarly journals Solution-Processed Efficient Blue Phosphorescent Organic Light-Emitting Diodes (PHOLEDs) Enabled by Hole-Transport Material Incorporated Single Emission Layer

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 554
Author(s):  
Taeshik Earmme
Keyword(s):  
Light Emitting Diodes ◽  
Blue Emission ◽  
Hole Transport ◽  
Organic Light Emitting Diodes ◽  
Emission Layer ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light ◽  
Single Emission ◽  
Blue Phosphorescent

Solution-processed blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a single emission layer with small-molecule hole-transport materials (HTMs) are demonstrated. Various HTMs have been readily incorporated by solution-processing to enhance hole-transport properties of the polymer-based emission layer. Poly(N-vinylcarbazole) (PVK)-based blue emission layer with iridium(III) bis(4,6-(di-fluorophenyl)pyridinato-N,C2′)picolinate (FIrpic) triplet emitter blended with solution-processed 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) gave luminous efficiency of 21.1 cd/A at a brightness of 6220 cd/m2 with an external quantum efficiency (EQE) of 10.6%. Blue PHOLEDs with solution-incorporated HTMs turned out to be 50% more efficient compared to the reference device without HTMs. The high hole mobility, high triplet energy of HTM, and favorable energy transfer between HTM blended PVK host and FIrpic blue dopant were found to be important factors for achieving high device performance. The results are instructive to design and/or select proper hole-transport materials in solution-processed single emission layer.

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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