Atomic flux circuits

2020 ◽  
Author(s):  
Douglas G. Bopp ◽  
Ellyse Taylor ◽  
Khoa Le ◽  
Susan Schima ◽  
Matthew Hummon ◽  
...  
Keyword(s):  
Atomic Flux

Theory of Interdiffusion in Solids

2006 ◽  
Vol 258-260 ◽  
pp. 52-58
Author(s):  
Y.C. Chen
Keyword(s):  
Subject Matter ◽  
Phase Growth ◽  
Atomic Flux ◽  
The Subject ◽  
Induced Stresses ◽  
Volume Unit ◽  
The Relationship

Traditional theories of interdiffusion in solids based on Fick’s first and second laws and Darken’s equations can not describe the relationship between the diffusion fluxes and the diffusion-induced stresses, because the subject matter of the traditional theories is the diffusing atom or atomic flux, not the volume unit within the interdiffusion field. For this reason, it is suggested that the concept of flow point in the interdiffusion field should be constructed to describe the diffusion-induced stresses and the phase growth.

A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

2003 ◽  
Vol 10 (04) ◽  
pp. 669-675
Author(s):  
F. S. Gard ◽  
J. D. Riley ◽  
R. Leckey ◽  
B. F. Usher
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Mode ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Mbe Growth ◽  
Atomic Flux

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Modeling Electromigration-Induced Stress Buildup Due to Nonuniform Temperature

1994 ◽  
Vol 338 ◽  
Author(s):  
J. J. Clement ◽  
C. V. Thompson ◽  
A. Enver
Keyword(s):  
Integrated Circuits ◽  
Driving Force ◽  
Stress Evolution ◽  
Nonuniform Temperature ◽  
Flux Divergence ◽  
Atomic Transport ◽  
Atomic Flux ◽  
Induced Stress ◽  
Interconnect Lines ◽  
Stress Buildup

ABSTRACTAtomic transport due to electromigration in interconnect lines in integrated circuits depends strongly on temperature. Therefore temperature nonuniformities can create sites of atomic flux divergence resulting in material accumulation or depletion leading to failure. The mechanical stress which will evolve at the sites of material flux divergence will oppose the electromigration driving force. A model is developed to describe the stress evolution during electromigration in the presence of temperature nonuniformnities. Solutions of the differential equations describing the electromigration-induced stress buildup are calculated numerically. The solutions are compared to experimental data in the literature.

Molecular dynamical simulations on a-C:H film growth from atomic flux of C and H: Effect of H fraction

2010 ◽  
Vol 374 (21) ◽  
pp. 2150-2155 ◽  
Author(s):  
W.L. Quan ◽  
H.X. Li ◽  
F. Zhao ◽  
L. Ji ◽  
W. Du ◽  
...  
Keyword(s):  
Film Growth ◽  
Atomic Flux ◽  
Dynamical Simulations

Influence of the thermal power of a Fe atomic flux on the formation of Cu/Fe nanofilms on a Si(001) substrate

2014 ◽  
Vol 59 (7) ◽  
pp. 1017-1026
Author(s):  
N. I. Plyusnin ◽  
V. M. Il’yashchenko ◽  
S. A. Kitan’ ◽  
W. -Ch. Lin ◽  
Ch. -Ch. Kuo
Keyword(s):  
Thermal Power ◽  
Atomic Flux

Electromigration Simulation for Metal Lines

2010 ◽  
Vol 132 (1) ◽  
Author(s):  
JianPing Jing ◽  
Lihua Liang ◽  
Guang Meng
Keyword(s):  
Concentration Gradient ◽  
High Performance ◽  
Simulation Method ◽  
Flux Divergence ◽  
Atomic Concentration ◽  
Atomic Flux ◽  
Fortran Code ◽  
Current Densities ◽  
Void Propagation ◽  
Electron Wind

As the electronics industry continues to push for high performance and miniaturization, the demand for higher current densities, which may cause electromigration failures in an IC, interconnects. Electromigration is a phenomenon that metallic atoms constructing the line are transported by electron wind. The damage induced by electromigration appears as the formation of voids and hillocks. A numerical simulation method for electromigration void incubation, and afterwards, void propagation, based on commercial software ANSYS Multiphysics and FORTRAN code, is presented in this paper. The electronic migration formulation considering the effects of the electron wind force, stress gradients, temperature gradients, and the atomic concentration gradient has been developed for the electromigration failure mechanisms. Due to introducing the atomic concentration gradient driving force in atomic flux formulations, the conventional atomic flux divergence method is no longer valid in electromigration (EM) simulation. Therefore, the corresponding EM atomic concentration redistribution algorithm is proposed using FORTRAN code. Finally, the comparison of voids generation through the numerical example of a standard wafer electromigration accelerated test (SWEAT) structure with the measurement result is discussed.

122 Testing of the Electromigration Resistance of High Purities Al Based on Atomic Flux Divergence Method

2009 ◽  
Vol 2009.44 (0) ◽  
pp. 42-43
Author(s):  
Xu ZHAO ◽  
Masumi SAKA ◽  
Mitsuo YAMASHITA ◽  
Fumiaki TOGOH
Keyword(s):  
Flux Divergence ◽  
Atomic Flux

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

2009 ◽  
Vol 311 (10) ◽  
pp. 2987-2991 ◽  
Author(s):  
T. Ohachi ◽  
N. Yamabe ◽  
H. Shimomura ◽  
T. Shimamura ◽  
O. Ariyada ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Si Substrates ◽  
Atomic Flux
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