Effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe

1996 ◽  
Author(s):  
Jan W. Baars ◽  
R. C. Keller ◽  
Hans-Joachim Richter ◽  
Matthias Seelmann-Eggebert
Keyword(s):  
Electrical Properties ◽  
Plasma Etching ◽  
Ecr Plasma ◽  
P Type ◽  
Ecr Plasma Etching

ECR Plasma Etching with Heavy Halogen Ions

1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2223-2228 ◽  
Author(s):  
Nobuo Fujiwara ◽  
Hisaharu Sawai ◽  
Masahiro Yoneda ◽  
Kyusaku Nishioka ◽  
Haruhiko Abe
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ecr Plasma Etching

Anisotropic ECR Plasma Etching with Low-Energy Ions

1993 ◽  
Vol 140-142 ◽  
pp. 39-54
Author(s):  
Y. Tobinaga ◽  
T. Miyano ◽  
K. Fujimoto ◽  
M. Fujito ◽  
H. Fujiwara
Keyword(s):  
Plasma Etching ◽  
Low Energy ◽  
Ecr Plasma ◽  
Low Energy Ions ◽  
Ecr Plasma Etching

ECR plasma etching of chemically vapour deposited diamond thin films

1992 ◽  
Vol 28 (9) ◽  
pp. 822 ◽  
Author(s):  
S.J. Pearton ◽  
A. Katz ◽  
F. Ren ◽  
J.R. Lothian
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Ecr Plasma Etching

Dry Etching of InGaP and AlInP in CH4/H2/Ar

1996 ◽  
Vol 421 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. J. Santana ◽  
E. S. Lambers ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Flow ◽  
Flow Rates ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Rates ◽  
Ecr Plasma Etching

AbstractElectron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs

1995 ◽  
Vol 31 (10) ◽  
pp. 834-836 ◽  
Author(s):  
J.G. van Hassel ◽  
C.M. van Es ◽  
P.A.M. Nouwens
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ecr Plasma Etching

ECR plasma etching of GaAs in CCl2F2/Ar/O2 discharge and IR studies of the etched surface

2005 ◽  
Vol 5 (4) ◽  
pp. 351-355 ◽  
Author(s):  
L.S.S. Singh ◽  
K.P. Tiwary ◽  
R.K. Purohit ◽  
Z.H. Zaidi ◽  
M. Husain
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ir Studies ◽  
Etched Surface ◽  
Ecr Plasma Etching

scholarly journals E-2-5 Plasma Resistant Evaluation of Photoresist Treated by Vacuum UV Cure Process in ECR Plasma Etching

2014 ◽  
Vol 2014 (0) ◽  
pp. _E-2-5-1_-_E-2-5-3_
Author(s):  
Haruyosi HAMA ◽  
Kyohei TERAO ◽  
Hidekuni TAKAO ◽  
Fusao SIMOKAWA ◽  
Fumikazu OOHIRA ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cure Process ◽  
Ecr Plasma ◽  
Vacuum Uv ◽  
Ecr Plasma Etching

240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry

2001 ◽  
Author(s):  
Naoyuki Kofuji ◽  
Takashi Tsutsumi ◽  
Eiji Matsumoto ◽  
Kotaro Fujimoto ◽  
Naoshi Itabashi ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Gas Chemistry ◽  
Aluminum Interconnects ◽  
Ecr Plasma Etching
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