Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study

Oxide-based Materials and Devices XI ◽

10.1117/12.2550534 ◽

2020 ◽

Author(s):

Kai Ding ◽

Vitaliy S. Avrutin ◽

Natalia Izyumskaya ◽

Ümit Özgür ◽

Hadis Morkoç

Keyword(s):

Molecular Beam Epitaxy ◽

Comparative Study ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l768 ◽

2004 ◽

Vol 43 (No. 6B) ◽

pp. L768-L770 ◽

Cited By ~ 51

Author(s):

Masataka Higashiwaki ◽

Toshiaki Matsui

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1147 ◽

2004 ◽

Vol 43 (No. 9A/B) ◽

pp. L1147-L1149 ◽

Cited By ~ 18

Author(s):

Masataka Higashiwaki ◽

Toshiaki Matsui

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Barrier Thickness ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Metamorphic InyGa1−yAs/InzAl1−zAs heterostructure field effect transistors grown on GaAs(001) substrates using molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585057 ◽

1990 ◽

Vol 8 (2) ◽

pp. 301 ◽

Cited By ~ 28

Author(s):

D. E. Grider

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000932 ◽

2021 ◽

Vol 39 (3) ◽

pp. 033402

Author(s):

Marko J. Tadjer ◽

Kohei Sasaki ◽

Daiki Wakimoto ◽

Travis J. Anderson ◽

Michael A. Mastro ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/4/322 ◽

2003 ◽

Vol 18 (4) ◽

pp. 319-324 ◽

Cited By ~ 1

Author(s):

Hung-Ming Chuang ◽

Chih-Kai Wang ◽

Kun-Wei Lin ◽

Wen-Hui Chiou ◽

Chun-Yuan Chen ◽

...

Keyword(s):

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors

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Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.100740 ◽

1989 ◽

Vol 54 (12) ◽

pp. 1136-1138 ◽

Cited By ~ 5

Author(s):

J. B. Kuang ◽

P. J. Tasker ◽

Y. K. Chen ◽

G. W. Wang ◽

L. F. Eastman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.94741 ◽

1984 ◽

Vol 44 (3) ◽

pp. 325-327 ◽

Cited By ~ 14

Author(s):

T. Sanada ◽

S. Yamakoshi ◽

O. Wada ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Monolithic Integration ◽

Multiquantum Well

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A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.3079798 ◽

2009 ◽

Vol 94 (5) ◽

pp. 053513 ◽

Cited By ~ 33

Author(s):

Masataka Higashiwaki ◽

Zhen Chen ◽

Rongming Chu ◽

Yi Pei ◽

Stacia Keller ◽

...

Keyword(s):

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deposition Method ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.343600 ◽

1989 ◽

Vol 66 (12) ◽

pp. 6168-6174 ◽

Cited By ~ 7

Author(s):

J. B. Kuang ◽

P. J. Tasker ◽

S. Ratanaphanyarat ◽

W. J. Schaff ◽

L. F. Eastman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Low Frequency ◽

Microwave Characterization

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Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Applied Physics Express ◽

10.7567/apex.10.071101 ◽

2017 ◽

Vol 10 (7) ◽

pp. 071101 ◽

Cited By ~ 77

Author(s):

Elaheh Ahmadi ◽

Onur S. Koksaldi ◽

Xun Zheng ◽

Tom Mates ◽

Yuichi Oshima ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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