Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

2021 ◽  
Vol 39 (3) ◽  
pp. 033402
Author(s):  
Marko J. Tadjer ◽  
Kohei Sasaki ◽  
Daiki Wakimoto ◽  
Travis J. Anderson ◽  
Michael A. Mastro ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

1989 ◽  
Vol 54 (12) ◽  
pp. 1136-1138 ◽  
Author(s):  
J. B. Kuang ◽  
P. J. Tasker ◽  
Y. K. Chen ◽  
G. W. Wang ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

2017 ◽  
Vol 10 (7) ◽  
pp. 071101 ◽  
Author(s):  
Elaheh Ahmadi ◽  
Onur S. Koksaldi ◽  
Xun Zheng ◽  
Tom Mates ◽  
Yuichi Oshima ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si

1984 ◽  
Vol 45 (8) ◽  
pp. 907-909 ◽  
Author(s):  
T. P. Smith ◽  
Julia M. Phillips ◽  
W. M. Augustyniak ◽  
P. J. Stiles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors
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