Single photon imaging Lidar using three Geiger-mode avalanche diodes

2019 ◽  
Author(s):  
Zhenyang Zhang ◽  
Caiwen Ma ◽  
Xiuqin Su ◽  
Songmao Chen ◽  
Shuchao Wang ◽  
...  
Keyword(s):  
Single Photon ◽  
Avalanche Diodes ◽  
Geiger Mode ◽  
Photon Imaging

Single-Element Passive Quenching with Active Reset Circuit for Single Photon Avalanche Diodes

2014 ◽  
Vol 644-650 ◽  
pp. 3709-3712
Author(s):  
Chong Hu ◽  
Teh Hua Ju ◽  
Yong Yao
Keyword(s):  
Single Photon ◽  
Single Element ◽  
Similar Function ◽  
Operation Mechanism ◽  
Mode Operation ◽  
Avalanche Diodes ◽  
Geiger Mode ◽  
Free Running ◽  
Future Work ◽  
Single Photon Avalanche Diodes

A single-element passive quenching with active reset (PQAR) circuit is proposed. Its operation mechanism is studied in theory to show that this single element, based on thyristor, can provide similar function of quenching and reset for the free-running Geiger-mode operation of single photon avalanche diodes (SPADs) as the conventional PQAR circuits, but with significant simplicity. Requirement for the thyristor is identified, and an InP sample was designed, fabricated and characterized. Future work for further demonstration is also discussed.

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability

2009 ◽  
Vol 615-617 ◽  
pp. 877-880 ◽  
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Single Photon ◽  
Avalanche Photodiodes ◽  
Single Photon Detection ◽  
Induced Current ◽  
Dark Count ◽  
Device Structure ◽  
Photon Detection ◽  
Avalanche Diodes ◽  
Geiger Mode ◽  
Electron Beam Induced Current

4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized for operation in Geiger mode. An estimated dark current at a gain of 1000 was ranging between 0.4 pA (0.75 nA/cm2) and 20nA (38 A/cm2) on devices with an effective mesa diameter of 260 m. The electron beam induced current technique was used to image defects in the active region of studied devices. Increased reverse bias leakage current and increased Geiger mode dark count probability were correlated with the presence of large number of defects. Single photon detection efficiencies of up to 11% were measured at a wavelength of 266 nm in Geiger mode.

FPGA-Based TDC for Single-Photon Intensity Interferometry

2016 ◽  
Vol 05 (04) ◽  
pp. 1641016 ◽  
Author(s):  
Adrian Sinclair ◽  
Genady Pilyavsky ◽  
Edward Schroeder ◽  
Philip Mauskopf
Keyword(s):  
Single Photon ◽  
Photon Detectors ◽  
Linear Mode ◽  
Avalanche Diodes ◽  
Photon Intensity ◽  
Single Photon Detectors ◽  
Field Programmable ◽  
Geiger Mode ◽  
Future Work ◽  
Intensity Interferometer

A prototype intensity interferometer readout for single-photon detectors is presented as a time-to-digital converter (TDC) implemented on a field-programmable gate array (FPGA). We briefly discuss the history and scientific motivations for the instrument. A comparison is drawn between the use of photomultiplier tubes in linear mode and single-photon avalanche diodes (SPAD) in Geiger mode. Different FPGA-based TDC configurations are discussed. We describe the design and implementation of a four-phase FPGA-based TDC. The paper concludes with the application of the design to investigate SPAD after-pulsing and a description of future work.

scholarly journals Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Nanophotonics ◽  
2015 ◽  
Vol 4 (4) ◽  
pp. 397-412 ◽  
Author(s):  
David Hall ◽  
Yu-Hsin Liu ◽  
Yu-Hwa Lo
Keyword(s):  
Negative Feedback ◽  
Dynamic Range ◽  
Detection Efficiency ◽  
Single Photon ◽  
Space Communications ◽  
Infrared Sensing ◽  
Avalanche Diodes ◽  
Geiger Mode ◽  
High Detection Efficiency ◽  
Viable Approach

AbstractWhile silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors,while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

scholarly journals Design of a Real-Time Breakdown Voltage and On-Chip Temperature Monitoring System for Single Photon Avalanche Diodes

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 25
Author(s):  
Shijie Deng ◽  
Alan P. Morrison ◽  
Yong Guo ◽  
Chuanxin Teng ◽  
Ming Chen ◽  
...  
Keyword(s):  
Real Time ◽  
Breakdown Voltage ◽  
Count Rate ◽  
Single Photon ◽  
Photon Counting ◽  
Temperature Monitoring ◽  
Dark Count ◽  
Chip Temperature ◽  
Avalanche Diodes ◽  
On Chip

The design and implementation of a real-time breakdown voltage and on-chip temperature monitoring system for single photon avalanche diodes (SPADs) is described in this work. In the system, an on-chip shaded (active area of the detector covered by a metal layer) SPAD is used to provide a dark count rate for the breakdown voltage and temperature calculation. A bias circuit was designed to provide a bias voltage scanning for the shaded SPAD. A microcontroller records the pulses from the anode of the shaded SPAD and calculates its real-time dark count rate. An algorithm was developed for the microcontroller to calculate the SPAD’s breakdown voltage and the on-chip temperature in real time. Experimental results show that the system is capable of measuring the SPAD’s breakdown voltage with a mismatch of less than 1.2%. Results also show that the system can provide real-time on-chip temperature monitoring for the range of −10 to 50 °C with errors of less than 1.7 °C. The system proposed can be used for the real-time SPAD’s breakdown voltage and temperature estimation for dual-SPADs or SPAD arrays chip where identical detectors are fabricated on the same chip and one or more dummy SPADs are shaded. With the breakdown voltage and the on-chip temperature monitoring, intelligent control logic can be developed to optimize the performance of the SPAD-based photon counting system by adjusting the parameters such as excess bias voltage and dead-time. This is particularly useful for SPAD photon counting systems used in complex working environments such as the applications in 3D LIDAR imaging for geodesy, geology, geomorphology, forestry, atmospheric physics and autonomous vehicles.

scholarly journals Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

2021 ◽  
pp. 1-1
Author(s):  
Fabio Signorelli ◽  
Fabio Telesca ◽  
Enrico Conca ◽  
Adriano Della Frera ◽  
Alessandro Ruggeri ◽  
...  
Keyword(s):  
Free Space ◽  
Single Photon ◽  
Low Noise ◽  
Space Applications ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Afterpulse Reduction Through Prompt Quenching in Silicon Reach-Through Single-Photon Avalanche Diodes

2014 ◽  
Vol 32 (21) ◽  
pp. 4097-4103 ◽  
Author(s):  
Michael A. Wayne ◽  
Alessandro Restelli ◽  
Joshua C. Bienfang ◽  
Paul G. Kwiat
Keyword(s):  
Single Photon ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes
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