CW performance of QD lasers on silicon including carrier transport in the SCH barrier (Conference Presentation)

2020 ◽  
Author(s):  
Marco Saldutti ◽  
Alberto Tibaldi ◽  
Federica Cappelluti ◽  
Francesco Bertazzi ◽  
Mariangela Gioannini
Keyword(s):  
Carrier Transport

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Carrier Transport in 2-D Materials: an Ab Initio Study

2019 ◽  
Author(s):  
Mathieu Luisier ◽  
Aron Szabo ◽  
Cedric Klinkert ◽  
Christian Stieger ◽  
Martin Rau ◽  
...  
Keyword(s):  
Ab Initio ◽  
Carrier Transport ◽  
Ab Initio Study

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier

2020 ◽  
Vol 54 (5) ◽  
pp. 529-533
Author(s):  
S. O. Slipchenko ◽  
A. A. Podoskin ◽  
O. S. Soboleva ◽  
V. S. Yuferev ◽  
V. S. Golovin ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Transport Processes ◽  
Wide Gap

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

scholarly journals Charge Sharing and Charge Loss in High-Flux Capable Pixelated CdZnTe Detectors

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3260
Author(s):  
Kjell A. L. Koch-Mehrin ◽  
Sarah L. Bugby ◽  
John E. Lees ◽  
Matthew C. Veale ◽  
Matthew D. Wilson
Keyword(s):  
Carrier Transport ◽  
Hole Transport ◽  
Uniform Electric Field ◽  
Photon Flux ◽  
High Flux ◽  
Charge Sharing ◽  
Cdte Detector ◽  
Charge Loss ◽  
Cdznte Detectors ◽  
Detector Model

Cadmium zinc telluride (CdZnTe) detectors are known to suffer from polarization effects under high photon flux due to poor hole transport in the crystal material. This has led to the development of a high-flux capable CdZnTe material (HF-CdZnTe). Detectors with the HF-CdZnTe material have shown promising results at mitigating the onset of the polarization phenomenon, likely linked to improved crystal quality and hole carrier transport. Better hole transport will have an impact on charge collection, particularly in pixelated detector designs and thick sensors (>1 mm). In this paper, the presence of charge sharing and the magnitude of charge loss were calculated for a 2 mm thick pixelated HF-CdZnTe detector with 250 μm pixel pitch and 25 μm pixel gaps, bonded to the STFC HEXITEC ASIC. Results are compared with a CdTe detector as a reference point and supported with simulations from a Monte-Carlo detector model. Charge sharing events showed minimal charge loss in the HF-CdZnTe, resulting in a spectral resolution of 1.63 ± 0.08 keV Full Width at Half Maximum (FWHM) for bipixel charge sharing events at 59.5 keV. Depth of interaction effects were shown to influence charge loss in shared events. The performance is discussed in relation to the improved hole transport of HF-CdZnTe and comparison with simulated results provided evidence of a uniform electric field.

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