Intense nickel-K-photon irradiation from weakly-ionized linear plasma x-ray source with a reflector

2019 ◽  
Author(s):  
Eiichi Sato ◽  
Yuichi Sato ◽  
Sohei Yoshida ◽  
Kunihiro Yoshioka ◽  
Hodaka Moriyama ◽  
...  
Keyword(s):  
X Ray ◽  
Photon Irradiation ◽  
Weakly Ionized ◽  
Linear Plasma

Intense nickel-K-photon irradiation from weakly-ionized linear plasma x-ray source with a zinc reflector

2019 ◽  
Author(s):  
Eiichi Sato ◽  
Yasuyuki Oda ◽  
Yuichi Sato ◽  
Hodaka Moriyama ◽  
Osahiko Hagiwara ◽  
...  
Keyword(s):  
X Ray ◽  
Photon Irradiation ◽  
Weakly Ionized ◽  
Linear Plasma

Sharp characteristic X-ray irradiation from weakly ionized linear plasma

2004 ◽  
Vol 137-140 ◽  
pp. 713-720 ◽  
Author(s):  
E Sato ◽  
Y Hayasi ◽  
R Germer ◽  
E Tanaka ◽  
H Mori ◽  
...  
Keyword(s):  
X Ray ◽  
Weakly Ionized ◽  
Linear Plasma

Weakly ionized linear plasma x-ray generator with molybdenum-target triode

2005 ◽  
Author(s):  
Eiichi Sato ◽  
Yasuomi Hayasi ◽  
Rudolf Germer ◽  
Etsuro Tanaka ◽  
Hidezo Mori ◽  
...  
Keyword(s):  
X Ray ◽  
Weakly Ionized ◽  
Linear Plasma

Water-window flash x-ray production from linear plasma x-ray source

2000 ◽  
Author(s):  
Eiichi Sato ◽  
Michiaki Sagae ◽  
Hiroyuki Toriyabe ◽  
Wataru Awaji ◽  
Yasuomi Hayasi ◽  
...  
Keyword(s):  
X Ray ◽  
Water Window ◽  
Linear Plasma

scholarly journals Photolysis of Fluorinated Graphites with Embedded Acetonitrile Using a White-Beam Synchrotron Radiation

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 231
Author(s):  
Galina I. Semushkina ◽  
Yuliya V. Fedoseeva ◽  
Anna A. Makarova ◽  
Dmitry A. Smirnov ◽  
Igor P. Asanov ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Photon Irradiation ◽  
Nexafs Spectroscopy ◽  
White Beam ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
X Ray Absorption

Fluorinated graphitic layers with good mechanical and chemical stability, polar C–F bonds, and tunable bandgap are attractive for a variety of applications. In this work, we investigated the photolysis of fluorinated graphites with interlayer embedded acetonitrile, which is the simplest representative of the acetonitrile-containing photosensitizing family. The samples were continuously illuminated in situ with high-brightness non-monochromatized synchrotron radiation. Changes in the compositions of the samples were monitored using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The NEXAFS N K-edge spectra showed that acetonitrile dissociates to form HCN and N2 molecules after exposure to the white beam for 2 s, and the latter molecules completely disappear after exposure for 200 s. The original composition of fluorinated matrices CF0.3 and CF0.5 is changed to CF0.10 and GF0.17, respectively. The highly fluorinated layers lose fluorine atoms together with carbon neighbors, creating atomic vacancies. The edges of vacancies are terminated with the nitrogen atoms and form pyridinic and pyrrolic units. Our in situ studies show that the photolysis products of acetonitrile depend on the photon irradiation duration and composition of the initial CFx matrix. The obtained results evaluate the radiation damage of the acetonitrile-intercalated fluorinated graphites and the opportunities to synthesize nitrogen-doped graphene materials.

scholarly journals Effects of the laser irradiation on graphene oxide foils in vacuum and air -=SUP=-*-=/SUP=-

2019 ◽  
Vol 61 (7) ◽  
pp. 1385
Author(s):  
L. Torrisi ◽  
M. Cutroneo ◽  
L. Silipigni ◽  
M. Fazio ◽  
A. Torrisi
Keyword(s):  
Graphene Oxide ◽  
Carbon Content ◽  
Laser Irradiation ◽  
Alpha Particle ◽  
Nd:Yag Laser ◽  
Rutherford Backscattering Spectrometry ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Photon Irradiation ◽  
Chemical Effects

AbstractA Nd:YAG laser operating at 1064 nm was used to irradiate, at different intensities, graphene oxide foils placed in vacuum and in air. The laser irradiated GO foils were analysed successively by using different techniques such as 2.0 MeV alpha particle Rutherford backscattering spectrometry, X-ray photoemission spectroscopy and SEM-EDX. In particular, in vacuum irradiated graphene oxide samples the oxygen reduction has been observed with increment of the carbon content. In air irradiated GO samples an increase in oxygen has instead been highlighted. Furthermore thermal and chemical effects are induced by the photon irradiation. Results will be presented and discussed.

scholarly journals Calculation of radiation dose enhancement by gadolinium compounds for radiation therapy

2022 ◽  
Vol 2155 (1) ◽  
pp. 012030
Author(s):  
G.A. Abdullaeva ◽  
G.A. Kulabdullaev ◽  
A.A. Kim ◽  
A.F. Nebesny ◽  
D.O. Yuldashev
Keyword(s):  
Radiation Therapy ◽  
Contrast Agent ◽  
Biological Tissue ◽  
Radiation Energy ◽  
Dose Enhancement ◽  
X Ray ◽  
Photon Irradiation ◽  
Irradiation Energy ◽  
Gd Contrast Agent ◽  
Shell Ionization

Abstract In this study, we evaluate the features of dose enhancement with Gd contrast agent (Magnevist). Due to the increased relaxation time and high atomic number (z=64) Gd can be used in radiation therapy as a radiosensitizer. To perform a quantitative evaluation of the radiosensitization effect is determined a parameter called the dose enhancement factor - DEF. The DEF values were calculated based on the analysis of the mass absorption coefficients for gadolinium and biological tissue. An increase in DEF is observed when the radiation energy is higher than the K-shell ionization energy of Gd atoms. For the presence of 20315 ppm Gd contrast agent in biological tissue the dose enrichment factor is maximum DEF = 4.12 at photon irradiation energy 60 keV. Also, based on calculations for photon irradiation sources considered high degrees of dose enhancement occur for Am-241, Yb-196, and 100 kVp X-ray tube.

Electron and Photon Irradiation Effects in Metal/Amorphous Chalcogenide Bilayers

1994 ◽  
Vol 337 ◽  
Author(s):  
Andreas Ploessl ◽  
B.J. Dhanjal ◽  
A.G. Fitzgerald ◽  
R.A.G. Gibson ◽  
A.D. Gillies
Keyword(s):  
Electron Beam ◽  
Ultraviolet Light ◽  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
X Ray ◽  
Photon Irradiation ◽  
Amorphous Chalcogenides ◽  
Potential Benefits ◽  
Electron And Photon ◽  
Better Than

ABSTRACTThin film bilayers of metal and amorphous chalcogenides have been prepared by evaporation. The metals were silver and zinc, while the chalcogenides were P2Se3 and arsenic sulphides, mainly As2S3. The metals dissolved into the chalcogenide films when illuminated with ultraviolet light or when irradiated with an electron beam. The changes in composition and chemical bonding which were caused by this irradiation, were investigated by x-ray photoelectron spectroscopy. The concomitant structural changes have been investigated by electron diffraction.After the metal and chalcogenide had intermixed, either due to photon or electron irradiation, the layers became sensitive to an electron beam; this sensitivity depended on the composition of the chalcogenide. Energy-dispersive x-ray microanalysis showed that the electron beam rapidly, but reversibly, depleted the irradiated areas of the dissolved metal. Very fine patterns, of better than half-micron resolution, could be written. By exposing a pure arsenic sulphide film through a shadow mask to ultraviolet light, zinc could be deposited selectively to form fine patterns. Plasma processing developed either kind of pattern reliably, thus rendering the material a dry inorganic resist for photo- and electron-beam-lithography with potential benefits in particular for GaAs.

Photo-Chemical Changes of Aluminium Films on Silicon

1988 ◽  
Vol 119 ◽  
Author(s):  
A. J. Kellock ◽  
J. S. Williams ◽  
G. L. Nyberg ◽  
J. Liesegang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Surface Oxidation ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Chemical Changes ◽  
X Ray ◽  
Surface And Interface ◽  
Photon Irradiation

AbstractX-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

High-intensity quasi-monochromatic x-ray irradiation from the linear plasma target

2001 ◽  
Author(s):  
Eiichi Sato ◽  
Yusaku Suzuki ◽  
Yasuomi Hayasi ◽  
Etsuro Tanaka ◽  
Hidezo Mori ◽  
...  
Keyword(s):  
High Intensity ◽  
X Ray ◽  
Plasma Target ◽  
Linear Plasma
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