Fabrication and characterization of a Fabry-Perot-based chemical sensor

Author(s):  
Jaeheon Han ◽  
Dean P. Neikirk ◽  
Marvin B. Clevenger ◽  
John T. McDevitt
2019 ◽  
Vol 37 (9) ◽  
pp. 1893-1902 ◽  
Author(s):  
Majid Taghavi ◽  
Hamid Latifi ◽  
Gholam Mohammad Parsanasab ◽  
Abolfazl Abedi ◽  
Hamed Nikbakht ◽  
...  

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 799 ◽  
Author(s):  
Qu Zhou ◽  
ChangXiang Hong ◽  
Yao Yao ◽  
Ahmed Ibrahim ◽  
Lingna Xu ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Iodice ◽  
I. Rendina ◽  
L. Sirleto

We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.


2018 ◽  
Vol 8 (6) ◽  
pp. 1415-1425 ◽  
Author(s):  
Yannan Shen ◽  
André Istock ◽  
Anik Zaman ◽  
Carsten Woidt ◽  
Hartmut Hillmer

2014 ◽  
Vol 12 (10) ◽  
pp. 1534-1539
Author(s):  
H. M. Zaki ◽  
Saleh. H. Al-Heniti ◽  
Robert Haddon ◽  
Ahmad Umar ◽  
G. N. Dar ◽  
...  

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.


2008 ◽  
Vol 129 (1) ◽  
pp. 487-490 ◽  
Author(s):  
E. Massera ◽  
A. Castaldo ◽  
L. Quercia ◽  
G. Di Francia

2015 ◽  
Vol 44 (48) ◽  
pp. 21081-21087 ◽  
Author(s):  
Ahmad Umar ◽  
Ali Al-Hajry ◽  
Rafiq Ahmad ◽  
S. G. Ansari ◽  
Mohammed Sultan Al-Assiri ◽  
...  

Herein, we report the development of a simple and highly sensitive hydroquinone (HQ) chemical sensor based on an electrochemically activated iron-doped zinc oxide nanorod modified screen-printed electrode.


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