Design, Fabrication and Characterization of Asymmetric Fabry-Perot Modulator for Large Size Optical Shutter

2010 ◽  
Author(s):  
Byung Hoon Na ◽  
Kwang Mo Park ◽  
Sooraj R. ◽  
Bong Kyu Jeong ◽  
Young Min Song ◽  
...  
Keyword(s):  
Large Size ◽  
Fabry Perot ◽  
Optical Shutter ◽  
Fabrication And Characterization

Simulation, Fabrication, and Characterization of a Sensitive SU-8-Based Fabry-Pérot MOEMS Accelerometer

2019 ◽  
Vol 37 (9) ◽  
pp. 1893-1902 ◽  
Author(s):  
Majid Taghavi ◽  
Hamid Latifi ◽  
Gholam Mohammad Parsanasab ◽  
Abolfazl Abedi ◽  
Hamed Nikbakht ◽  
...  
Keyword(s):  
Fabry Perot ◽  
Fabrication And Characterization

Fabrication and characterization of a Fabry-Perot-based chemical sensor

1996 ◽  
Author(s):  
Jaeheon Han ◽  
Dean P. Neikirk ◽  
Marvin B. Clevenger ◽  
John T. McDevitt
Keyword(s):  
Chemical Sensor ◽  
Fabry Perot ◽  
Fabrication And Characterization

scholarly journals Near-Infrared All-Silicon Photodetectors

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Iodice ◽  
I. Rendina ◽  
L. Sirleto
Keyword(s):  
Reverse Bias ◽  
Near Infrared ◽  
Free Spectral Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Integrated Devices ◽  
Fabry Perot ◽  
Fabrication And Characterization ◽  
Cavity Effect

We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.

Fabrication and characterization of multi-stopband Fabry–Pérot filter array for nanospectrometers in the VIS range using SCIL nanoimprint technology

2018 ◽  
Vol 8 (6) ◽  
pp. 1415-1425 ◽  
Author(s):  
Yannan Shen ◽  
André Istock ◽  
Anik Zaman ◽  
Carsten Woidt ◽  
Hartmut Hillmer
Keyword(s):  
Filter Array ◽  
Fabry Perot ◽  
Fabrication And Characterization

GaAs/GaAlAs MULTIQUANTUM WELL ELECTROABSORPTION REFLECTION MODULATOR AND SELF ELECTRO-OPTIC EFFECT DEVICE (SEED)

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  
Keyword(s):  
Stark Effect ◽  
Optical Switch ◽  
Contrast Ratio ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Quantum Confined Stark Effect ◽  
Electro Optic ◽  
Fabry Perot ◽  
Fabrication And Characterization

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.

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