Fast electro-optics effect in strained silicon waveguide (Conference Presentation)

2019 ◽  
Author(s):  
Mathias Berciano ◽  
Guillaume Marcaud ◽  
Xavier Le Roux ◽  
Carlos A. Alonso-Ramos ◽  
Christian Lafforgue ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Silicon Waveguide

scholarly journals Single mode and polarization independence in the strained silicon-on-insulator rib waveguides

2008 ◽  
Vol 62 (3) ◽  
pp. 119-124
Author(s):  
Milan Milosevic ◽  
Petar Matavulj ◽  
Goran Mashanovich
Keyword(s):  
Cross Section ◽  
Single Mode ◽  
Design Guidelines ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Rib Waveguide ◽  
Silicon Waveguide ◽  
Wide Range ◽  
Rib Waveguides

In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator (SOI) rib waveguide. Single mode and birefringence free conditions in these relatively small waveguides are discussed and the influence of the top oxide cladding stress is analyzed. Field profiles for a wide range of waveguide cross section shapes and dimensions are systematically considered. Design guidelines for this type of SOI waveguides are presented.

High-speed Pockels effect in strained silicon waveguide (Conference Presentation)

2018 ◽  
Author(s):  
Mathias Berciano ◽  
Guillaume Marcaud ◽  
Pedro Damas ◽  
Xavier Le Roux ◽  
Carlos Alonso-Ramos ◽  
...  
Keyword(s):  
High Speed ◽  
Strained Silicon ◽  
Pockels Effect ◽  
Silicon Waveguide

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Atomistic Calculation of Elastic Moduli in Strained Silicon

2007 ◽  
Author(s):  
Richard Zhu ◽  
Ernian Pan ◽  
Peter W. Chung ◽  
Xinli Cai ◽  
Kim M. Liew ◽  
...  
Keyword(s):  
Elastic Moduli ◽  
Strained Silicon ◽  
Atomistic Calculation

Recovery time for a silicon waveguide all-optical switch

1988 ◽  
Vol 24 (6) ◽  
pp. 303 ◽  
Author(s):  
P.D. Colbourne ◽  
P.E. Jessop
Keyword(s):  
Recovery Time ◽  
Optical Switch ◽  
Silicon Waveguide ◽  
All Optical ◽  
All Optical Switch

scholarly journals Indirect light absorption model for highly strained silicon infrared sensors

2021 ◽  
Vol 130 (5) ◽  
pp. 055105
Author(s):  
Nicolas Roisin ◽  
Guillaume Brunin ◽  
Gian-Marco Rignanese ◽  
Denis Flandre ◽  
Jean-Pierre Raskin
Keyword(s):  
Light Absorption ◽  
Strained Silicon ◽  
Absorption Model ◽  
Infrared Sensors ◽  
Highly Strained
Sign in / Sign up

Export Citation Format

Share Document