scholarly journals Single mode and polarization independence in the strained silicon-on-insulator rib waveguides

2008 ◽  
Vol 62 (3) ◽  
pp. 119-124
Author(s):  
Milan Milosevic ◽  
Petar Matavulj ◽  
Goran Mashanovich

In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator (SOI) rib waveguide. Single mode and birefringence free conditions in these relatively small waveguides are discussed and the influence of the top oxide cladding stress is analyzed. Field profiles for a wide range of waveguide cross section shapes and dimensions are systematically considered. Design guidelines for this type of SOI waveguides are presented.

2004 ◽  
Vol 22 (8) ◽  
pp. 1923-1929 ◽  
Author(s):  
J. Lousteau ◽  
D. Furniss ◽  
A.B. Seddon ◽  
T.M. Benson ◽  
A. Vukovic ◽  
...  

Author(s):  
Nurdiani Zamhari ◽  
Abang Annuar Ehsan ◽  
Mohd Syuhaimi Abdul Rahman

S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 µm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 µm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 µm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.


2002 ◽  
Vol 210 (1-2) ◽  
pp. 43-49 ◽  
Author(s):  
L Vivien ◽  
S Laval ◽  
B Dumont ◽  
S Lardenois ◽  
A Koster ◽  
...  

1991 ◽  
Vol 244 ◽  
Author(s):  
J. Schmidtchen ◽  
B. Schüppert ◽  
A. Splett ◽  
K. Petermann

ABSTRACTThe realization of single-mode rib-waveguides with dimensions of several micrometers in Silicon-On-Insulator (SOI) is reported. The predicted monomode behaviour is confirmed by comparison of a simulated and a measured nearfield intensity distribution. Waveguide losses below 0.5dB/cm were obtained at wavelengths of 1.3μm and 1.55μm, respectively, independent of the polarization state.


2005 ◽  
Vol 23 (6) ◽  
pp. 2103-2111 ◽  
Author(s):  
Seong Phun Chan ◽  
Ching Eng Png ◽  
Soon Thor Lim ◽  
G.T. Reed ◽  
V.M.N. Passaro

2013 ◽  
Vol 33 (10) ◽  
pp. 1013002
Author(s):  
严朝军 Yan Chaojun ◽  
彭文标 Peng Wenbiao ◽  
覃琴 Qin Qin

2021 ◽  
Author(s):  
Ahmed B. Ayoub ◽  
Mohamed Swillam

Abstract We propose a detailed study of an on-chip optical modulator using a non-conventional silicon-based platform. This platform is based on the optimum design of ultra-thin silicon on insulator (SOI) waveguide. This platform is characterized by low field confinement inside the core waveguide and high sensitivity to the cladding index. Accordingly, it lends itself to a wide range of applications, such as sensing and optical modulation. By employing this waveguide into the Mach-Zehnder interferometer (MZI) configuration, an efficient optical modulator is reported using an organic polymer as an active material for the electro-optic effect. An extinction ratio of more than 20 dB is achieved with energy per bit of 13.21 fJ/bit for 0.5 V applied voltage. This studied platform shows promising and adequate performance for modulation applications. It is cheap and easy to fabricate.


2008 ◽  
Vol 26 (13) ◽  
pp. 1840-1846 ◽  
Author(s):  
Milan M. Milosevic ◽  
Petar S. Matavulj ◽  
Branislav D. Timotijevic ◽  
Graham T. Reed ◽  
Goran Z. Mashanovich

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