High-speed Pockels effect in strained silicon waveguide (Conference Presentation)

2018 ◽  
Author(s):  
Mathias Berciano ◽  
Guillaume Marcaud ◽  
Pedro Damas ◽  
Xavier Le Roux ◽  
Carlos Alonso-Ramos ◽  
...  
Keyword(s):  
High Speed ◽  
Strained Silicon ◽  
Pockels Effect ◽  
Silicon Waveguide

scholarly journals High-speed optical modulation based on Pockels effect in strained silicon waveguides

2020 ◽  
Author(s):  
Christian Lafforgue ◽  
Mathias Berciano ◽  
Lucas Deniel ◽  
Guillaume Marcaud ◽  
Xavier Le Roux ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Modulation ◽  
Strained Silicon ◽  
Pockels Effect ◽  
Silicon Waveguides

scholarly journals Strained silicon photonics for Pockels effect based modulation

2017 ◽  
Author(s):  
Mathias Berciano ◽  
Pedro Damas ◽  
Guillaume Marcaud ◽  
Xavier Le Roux ◽  
Paul Crozat ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Strained Silicon ◽  
Pockels Effect

Fast electro-optics effect in strained silicon waveguide (Conference Presentation)

2019 ◽  
Author(s):  
Mathias Berciano ◽  
Guillaume Marcaud ◽  
Xavier Le Roux ◽  
Carlos A. Alonso-Ramos ◽  
Christian Lafforgue ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Silicon Waveguide

Integrated Optoelectronic Devices on Silicon

2012 ◽  
Vol 1396 ◽  
Author(s):  
Di Liang ◽  
John E. Bowers
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Continuous Wave ◽  
Light Emission ◽  
Extinction Ratio ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Pockels Effect

ABSTRACTSilicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Si-based planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively.

scholarly journals High-speed optical modulation based on carrier depletion in a silicon waveguide

2007 ◽  
Vol 15 (2) ◽  
pp. 660 ◽  
Author(s):  
Ansheng Liu ◽  
Ling Liao ◽  
Doron Rubin ◽  
Hat Nguyen ◽  
Berkehan Ciftcioglu ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Modulation ◽  
Silicon Waveguide

Pockels effect in strained silicon photonics (Conference Presentation)

2017 ◽  
Author(s):  
Laurent Vivien ◽  
Mathias Berciano ◽  
Pedro Damas ◽  
Guillaume Marcaud ◽  
Xavier Le Roux ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Strained Silicon ◽  
Pockels Effect
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