Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation)

2019 ◽  
Author(s):  
Omar Saket ◽  
Fabien Bayle ◽  
François Julien ◽  
Martina Morassi ◽  
Nuno Amador ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Investigation ◽  
Electron Beam Induced Current

Electron beam-induced current investigation of GaN Schottky diode

2005 ◽  
Vol 34 (7) ◽  
pp. 1059-1064 ◽  
Author(s):  
A. Matoussi ◽  
T. Boufaden ◽  
S. Guermazi ◽  
Y. Mlik ◽  
B. El Jani ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Diode ◽  
Induced Current ◽  
Current Investigation ◽  
Electron Beam Induced Current

(Invited) An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks

2019 ◽  
Vol 28 (2) ◽  
pp. 299-313
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Naoki Fukata ◽  
Masami Takase ◽  
Yoshihiro Nemoto ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Investigation ◽  
Gate Stacks ◽  
High K ◽  
Electron Beam Induced Current

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

2000 ◽  
Vol 338-342 ◽  
pp. 777-780 ◽  
Author(s):  
John Österman ◽  
Anders Hallén ◽  
Mikael Jargelius ◽  
Uwe Zimmermann ◽  
Augustinas Galeckas ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Beam ◽  
High Voltage ◽  
Induced Current ◽  
Current Investigation ◽  
Electron Beam Induced Current

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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