UV laser wavelength standard based on frequency doubling of He-Ne laser at 632.8 nm

Author(s):  
Jianbo Wang ◽  
Cong Yin ◽  
Jin Qian ◽  
Chunying Shi ◽  
Hanping Wang ◽  
...  
Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 372 ◽  
Author(s):  
Samuel Ligon ◽  
Gurdial Blugan ◽  
Jakob Kuebler

Freestanding SiCNO ceramic pieces with sub-mm features were produced by laser crosslinking of carbosilane and silazane polymer precursors followed by pyrolysis in inert atmosphere. Three different pulsed UV laser systems were investigated, and the influence of laser wavelength, operating power and scanning speed were all found to be important. Different photoinitiators were tested for the two lasers operating at 355 nm, while for the 266 nm laser, crosslinking occurred also without photoinitiator. Pre-treatment of glass substrates with fluorinated silanes was found to ease the release of green bodies during solvent development. Polymer crosslinking was observed with all three of the laser systems, as were bubbles, surface charring and in some cases ablation. By focusing the laser beam several millimeters above the surface of the resin, selective polymer crosslinking was observed exclusively.


1996 ◽  
Author(s):  
Can T. Zhong ◽  
Xin Z. Li ◽  
Sui T. Zhao ◽  
Yi C. Wang

1989 ◽  
Vol 162 ◽  
Author(s):  
Pehr E. Pehrsson ◽  
H. H. Nelson ◽  
F. G. Celii

ABSTRACTWe investigated UV laser irradiation as a method to modify the surface and gas phase chemistry in a diamond growth apparatus. In particular, attempts were made to reproduce reported laser-enhanced deposition. The variables included the laser wavelength and intensity, the precursor gas (and hence the gas-phase absorption), the flow rate, and the gas inlet orientation with respect to the filament. The samples were analyzed using optical microscopy, Scanning Electron Microscopy, the Scanning Auger Microprobe, and micro-Raman scattering. In all cases, the laser radiation suppressed or had no effect on diamond deposition in comparison to the adjacent unirradiated regions. The crystals that did grow in the irradiated regions were similar in size and morphology to those from the unirradiated areas, suggesting ablation or nucleation site blockage as possible deposition suppression mechanisms. The results suggest a novel method for diamond film patterning.


2016 ◽  
Author(s):  
Norman Ruhnke ◽  
André Müller ◽  
Bernd Eppich ◽  
Reiner Güther ◽  
Martin Maiwald ◽  
...  

2012 ◽  
Author(s):  
Hermann Kahle ◽  
Thomas Schwarzbäck ◽  
Marcus Eichfelder ◽  
Robert Roßbach ◽  
Michael Jetter ◽  
...  

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 394
Author(s):  
Hsin-Yi Tsai ◽  
Yu-Chen Hsieh ◽  
Yu-Hsuan Lin ◽  
Han-Chao Chang ◽  
Yu-Hsiang Tang ◽  
...  

The widely used rigid gas permeable (RGP) contact lenses provide higher oxygen permeability and tear exchange rate than do soft contact lenses. However, their wettability warrants improvement to enhance the wearing comfort. This study used UV laser (wavelength = 355 nm) to modify the surface properties of RGP contact lenses with materials of Boston XO® (Bausch & Lomb Incorporated). Briefly, the mesh pattern was fabricated on the RGP contact lens surface by using the laser and smoothed by using oxygen plasma; the enhanced hydrophilic efficiency was analyzed using contact angle measurement. The experiment results indicated that the contact angle of the lens material decreased by approximately 10°–20° when the pitch of mesh pattern was <50 μm under a 500-mm/s scanning speed. The oxygen plasma enhanced surface wettability with a decreased contact angle (40°). The hydrophilic characteristic of the UV laser and oxygen plasma–treated surface was twice that of oxygen plasma–treated and untreated surfaces. In the future, RGP contact lens edges could be treated with UV laser and oxygen plasma to enhance the tear wettability and wearing comfort.


1988 ◽  
Vol 129 ◽  
Author(s):  
A. Slaoui ◽  
F. Foulon ◽  
M. Bianconi ◽  
L. Correra ◽  
R. Nipoti ◽  
...  

ABSTRACTThe use of lasers in the doping of semiconductors has been investigated extensively these last years both for photovoltaic and microelectronic applications. In this work, doping of single-crystal silicon in BCl3 ambients using a pulsed UV laser has been studied as a function of laser wavelength and fluence in order to investigate the effects of photochemical decomposition of the BCl3 gas and the effects of thermal decomposition of adsorbed layers on the doping process. Different parameters involved in the process (laser energy density, number of pulses per frame, BCl3 gas pressure) were investigated. The electrical characteristics of the doped layers were discussed.


1990 ◽  
Vol 191 ◽  
Author(s):  
L. Wiedeman ◽  
H. Helvajian

ABSTRACTWe have conducted two separate experiments in the UV laser ablation of a sintered Yba2Cu3Ox+6wafer. We have measured the photoejected population distributions using selected UV laser wavelengths (4.01, 4.17 and 4.35 eV) near the 4.1 eV optical transition in Yba2Cu3Ox+6 In addition, we have measured the change in the ejected species kinetic energy as a function of the target bulk temperature. All the experiments were conducted at laser fluences well below the plasma formation threshold, and near that for product formation. Our results show that the UV laser ablation, at threshold fluences, proceeds via a nonthermal electronic excitation mechanism.


1988 ◽  
Vol 129 ◽  
Author(s):  
Th. Beuermann ◽  
M. Stuke

ABSTRACTWe use tunable UV laser light in the region 200-320 nm, produced by frequency doubling the output of a dye laser for the decomposition of organometallic compounds. This method has been applied to TMA, trimethylaluminum AI(CH3)3. Only theTMA monomer absorbs UV light for λ>220nm. TMA decomposes by one-photon absorption mainly into two channels: aluminum plus organic fragments and aluminummonomethyl plus organic fragments. The ratio [A1]/[AICH3] is wavelength dependent. Finally, we present a mechanism to explain the photolysis of trimethyl compounds of group III elements (Al,Ga,In).


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