Boron Doping of Silicon Using Excimer Lasers

1988 ◽  
Vol 129 ◽  
Author(s):  
A. Slaoui ◽  
F. Foulon ◽  
M. Bianconi ◽  
L. Correra ◽  
R. Nipoti ◽  
...  
Keyword(s):  
Laser Energy ◽  
Single Crystal Silicon ◽  
Boron Doping ◽  
Laser Wavelength ◽  
Excimer Lasers ◽  
Electrical Characteristics ◽  
Uv Laser ◽  
Crystal Silicon ◽  
Adsorbed Layers ◽  
Photochemical Decomposition

ABSTRACTThe use of lasers in the doping of semiconductors has been investigated extensively these last years both for photovoltaic and microelectronic applications. In this work, doping of single-crystal silicon in BCl3 ambients using a pulsed UV laser has been studied as a function of laser wavelength and fluence in order to investigate the effects of photochemical decomposition of the BCl3 gas and the effects of thermal decomposition of adsorbed layers on the doping process. Different parameters involved in the process (laser energy density, number of pulses per frame, BCl3 gas pressure) were investigated. The electrical characteristics of the doped layers were discussed.

Analytical Method for Calculating Curvature of Circular Silicon Wafer Caused by Boron Doping

2013 ◽  
Vol 562-565 ◽  
pp. 721-726
Author(s):  
Jiang Bo He ◽  
Jin Xie ◽  
Wu Zhou ◽  
Hao Qu ◽  
Peng Peng
Keyword(s):  
Silicon Wafer ◽  
Analytical Method ◽  
Residual Strain ◽  
Single Crystal Silicon ◽  
Boron Doping ◽  
Functionally Graded ◽  
Doping Profile ◽  
Crystal Silicon ◽  
Element Simulation ◽  
Graded Material

Doping can lead to residual strain and change of elastic properties in silicon. Residual strain makes silicon wafer exhibit curvature, which are used for fabricate MEMS structure. The boron doping profile is not uniform through depth, which makes doped silicon become a inhomogeneous material or Functionally Graded Material. For boron-doped circular single crystal silicon wafer, a analytical method which based on functionally graded plate mechanics theory, is proposed to calculate its curvature. Example was used to verify the analytical method through 3D finite element simulation.

Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growth

1993 ◽  
Vol 8 (6) ◽  
pp. 1334-1340 ◽  
Author(s):  
B.R. Stoner ◽  
S.R. Sahaida ◽  
J.P. Bade ◽  
P. Southworth ◽  
P.J. Ellis
Keyword(s):  
Silicon Surface ◽  
Diamond Films ◽  
Single Crystal Silicon ◽  
Film Surface ◽  
Potential Effect ◽  
Structural Defects ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Crystal Silicon ◽  
Nucleation Stage

Highly oriented diamond films were grown on single-crystal silicon substrates. Textured films were first nucleated by a two-step process that involved the conversion of the silicon surface to an epitaxial SiC layer, followed by bias-enhanced nucleation. The nucleation stage, which produced a partially oriented diamond film, was immediately followed by a (100) textured growth process, thus resulting in a film surface where approximately 100% of the grains are epitaxially oriented relative to the silicon substrate. The diamond films were characterized by both SEM and Raman spectroscopy. Structural defects in the film are discussed in the context of their potential effect on the electrical characteristics of the resulting film.

Growth and Characterization of Titanium Nitride Nanowires on Silicon Substrate Using Pulsed Laser Deposition Method for Biological Applications

2013 ◽  
Author(s):  
Seyram Gbordzoe ◽  
K. Mensah-Darkwa ◽  
Ram Gupta ◽  
Dhananjay Kumar
Keyword(s):  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Laser Deposition ◽  
Sem Images ◽  
Crystal Silicon

The present work reports on the growth and characterization of titanium nitride (TiN) nanowires on silicon substrate using a pulsed laser deposition (PLD) method. The TiN nanowires were grown on single crystal silicon substrate with (100) and (111) orientations at a range of substrate temperatures and under both nitrogen ambient and vacuum. The different orientation of silicon was chosen to see the effect of the substrate orientation on the growth of TiN nanowires. The laser energy entering the vacuum chamber to impinge the TiN target for nanowire deposition was varied from 70 to 80 mJ. The TiN nanowires samples were characterized using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). The diameter of the nanowires was observed to increase from 25 nm to 40 nm with an increase in laser beam energy entering the chamber. The shape and orientation of the nanowires was observed to be the same for (100) and (111) oriented silicon substrates as observed in SEM images. Corrosion tests were also conducted on the TiN nanowires.

Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

1979 ◽  
Vol 42 (20) ◽  
pp. 1356-1358 ◽  
Author(s):  
Raphael Tsu ◽  
Rodney T. Hodgson ◽  
Teh Yu Tan ◽  
John E. Baglin
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Uv Laser ◽  
Crystal Silicon ◽  
Disorder Transition

Microstructural Control of Amorphous Silicon Films Crystallized using an Excimer Laser

1997 ◽  
Vol 472 ◽  
Author(s):  
J.W. Viatella ◽  
R.K. Singh
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Crystal Silicon ◽  
Intimate Contact ◽  
Fine Grained ◽  
Silicon Thin Films ◽  
Fine Mesh ◽  
Microstructural Control

ABSTRACTThe results of experiments using two techniques for microstructural control of laser-annealed silicon thin films on SiO2 substrates are given. In the first set, photolithographically fabricated single-crystal silicon seed wafers in intimate contact with the silicon films are used to show that it is possible to control nucleation location during laser annealing. Laser energy density was varied from 250–450 mJ/cm2 and the resultant microstructure was characterized using transmission electron microscopy (TEM). It was found to consist of four distinct regions. Areas adjacent to the seed consisted of grains with dimensions ∼ 0.5 μm. The surrounding region consisted of larger (∼ 1 μm) rectangular grains. A third region was observed sporadically and consisted of large (∼ 1.5 μm) rectangular grains adjacent to the latter region. The fourth region occurred several microns away from the contact and consisted of a fine-grained microstructure. In the second set, fine mesh (19 μm) masks were used to selectively crystallize regions in laser-annealed films. The resultant microstructure was characterized using TEM and was found to consist of large (∼ 1.5 μm) edge grains with smaller (∼ 0.8 μm) grains just inside of the edge grains. A theoretical discussion is presented to explain the observed phenomena in both experiment sets.

Temperature Dependence of the Hall Mobility in Polycrystalline Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
S.E. Ready ◽  
J.B. Boyce ◽  
D.K. Fork ◽  
P. Mei ◽  
G.B. Anderson ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Grain Boundaries ◽  
Hall Mobility ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Electrical Characteristics ◽  
Crystal Silicon ◽  
Large Variability ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Crystallization of amorphous silicon thin films by various methods has fostered enhancements in the electrical characteristics over their amorphous counterparts. For example, carrier mobilities ranging from 10 to >100 cm2/V-sec have been reported for laser crystallized films. The rather large variability of the transport characteristics with crystallization processing conditions is not well understood and, as a result, greatly complicates device process debugging. In addition, while it is generally believed that defects inherent in the grain boundaries provide the primary barriers degrading transport properties relative to single crystal silicon, the specific nature of these defects is not known. In this paper, we present data on the temperature dependence of the Hall mobility of thin silicon films crystallized by thermal and excimer laser processing. Hall data for the laser-crystallized phosphorus-doped material show a temperature dependence which differs dramatically from that for thermally crystallized materials, while the effects of hydrogenation are similar, reducing the barriers at the grain boundaries.

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