In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements

1991 ◽  
Author(s):  
Bernard Drevillon ◽  
Manijeh Razeghi
Keyword(s):  
Low Pressure ◽  
Reflectance Anisotropy ◽  
Mocvd Growth ◽  
In Situ Investigation ◽  
Low Pressure Mocvd

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Low Pressure Mocvd Growth of InSb

1990 ◽  
Vol 216 ◽  
Author(s):  
B.T. Cunningham ◽  
R.P. Schneider ◽  
R.M. Biefeld
Keyword(s):  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Low Pressure ◽  
Lower Growth ◽  
Growth Pressure ◽  
Mocvd Growth ◽  
Partial Pressures ◽  
Low Pressure Mocvd ◽  
Sims Analysis

ABSTRACTLow pressure (200 Torr) metalorganic chemical vapor deposition (MOCVD) of InSb has been examined through variation of the Column III (TMIn) and Column V (TMSb or TESb) precursor partial pressures. The use of lower growth pressure significantly enhanced the range of allowable Column III and Column V partial pressures in which specular morphology InSb could be obtained without the formation of In droplets or Sb crystals. In addition, a 70% improvement in the average hole mobility was obtained, compared to InSb grown in the same reactor at atmospheric pressure. SIMS analysis revealed that Si at the substrate/epitaxial layer interface is an important impurity that may contribute to degradation of the mobility. Substitution of TESb for TMSb did not result in any improvement in the purity of the InSb.

Low Pressure Mocvd Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

AbstractHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550ºC andthe growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GalnAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm-3 have been measured by electrochemical profiling.

Low-pressure MOCVD growth of ZnTe and observation of gas reaction

Vacuum ◽  
1990 ◽  
Vol 41 (1-3) ◽  
pp. 715-717 ◽  
Author(s):  
M Nishio ◽  
H Ogawa ◽  
A Yoshida
Keyword(s):  
Low Pressure ◽  
Mocvd Growth ◽  
Low Pressure Mocvd

Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP

1992 ◽  
Vol 21 (2) ◽  
pp. 165-171 ◽  
Author(s):  
D. G. Knight ◽  
B. Emmerstorfer ◽  
G. Pakulski ◽  
C. Larocque ◽  
A. J. Springthorpe
Keyword(s):  
Low Pressure ◽  
High Quality ◽  
Mocvd Growth ◽  
Heterostructure Laser ◽  
Low Pressure Mocvd ◽  
Buried Heterostructure

In situ Investigation during Low Pressure Carburizing by Means of Synchrotron X-ray Diffraction*

2021 ◽  
Vol 76 (6) ◽  
pp. 417-431
Author(s):  
O. B. Tapar ◽  
M. Steinbacher ◽  
J. Gibmeier ◽  
N. Schell ◽  
J. Epp
Keyword(s):  
Low Pressure ◽  
X Ray Diffraction ◽  
Electron Synchrotron ◽  
Carbon Profile ◽  
X Ray ◽  
Direct Contribution ◽  
Synchrotron Facility ◽  
In Situ Investigation ◽  
Low Levels

Abstract In situ X-ray diffraction investigations during low pressure carburizing (LPC) processes were performed with a specially developed process chamber at the German Electron Synchrotron Facility (DESY) in Hamburg, Germany. Carbon saturation in austenite was reached in less than 20 seconds for all processes with different parameters and carbides formed at the surface. Therefore, the direct contribution of carbon donor gas to the carbon profile after 20 seconds was reduced to very low levels. After that point, further supply of carbon donor gas increased the amount of carbides formed at the surface, which will contribute to the carbon profile indirectly by dissolution in the following diffusion steps. During quenching, martensite at higher temperatures had a lower c/a ratio than later formed ones. This difference is credited to self-tempering effects and reordering of carbon atoms within the martensite lattice.

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