Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP

1992 ◽  
Vol 21 (2) ◽  
pp. 165-171 ◽  
Author(s):  
D. G. Knight ◽  
B. Emmerstorfer ◽  
G. Pakulski ◽  
C. Larocque ◽  
A. J. Springthorpe
Keyword(s):  
Low Pressure ◽  
High Quality ◽  
Mocvd Growth ◽  
Heterostructure Laser ◽  
Low Pressure Mocvd ◽  
Buried Heterostructure

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Low Pressure Mocvd Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

AbstractHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550ºC andthe growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GalnAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm-3 have been measured by electrochemical profiling.

Formation of AlGaAs/InGaAs buried-heterostructure laser diodes with high-quality lateral confinement interfaces

1993 ◽  
Author(s):  
Naresh Chand ◽  
Niloy K. Dutta ◽  
Sung-Nee G. Chu ◽  
Alexei V. Syrbou ◽  
Alexandru Z. Mereutza ◽  
...  
Keyword(s):  
Laser Diodes ◽  
High Quality ◽  
Lateral Confinement ◽  
Heterostructure Laser ◽  
Buried Heterostructure

Low Pressure Mocvd Growth of InSb

1990 ◽  
Vol 216 ◽  
Author(s):  
B.T. Cunningham ◽  
R.P. Schneider ◽  
R.M. Biefeld
Keyword(s):  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Low Pressure ◽  
Lower Growth ◽  
Growth Pressure ◽  
Mocvd Growth ◽  
Partial Pressures ◽  
Low Pressure Mocvd ◽  
Sims Analysis

ABSTRACTLow pressure (200 Torr) metalorganic chemical vapor deposition (MOCVD) of InSb has been examined through variation of the Column III (TMIn) and Column V (TMSb or TESb) precursor partial pressures. The use of lower growth pressure significantly enhanced the range of allowable Column III and Column V partial pressures in which specular morphology InSb could be obtained without the formation of In droplets or Sb crystals. In addition, a 70% improvement in the average hole mobility was obtained, compared to InSb grown in the same reactor at atmospheric pressure. SIMS analysis revealed that Si at the substrate/epitaxial layer interface is an important impurity that may contribute to degradation of the mobility. Substitution of TESb for TMSb did not result in any improvement in the purity of the InSb.

High Quality In1-x(Gax)AsyP1-y/InP Compressive Strained Quantum Well Structures Grown by LP-MOCVD

1996 ◽  
Vol 421 ◽  
Author(s):  
J. T. Zhu ◽  
A. R. Clawson ◽  
P. K. L. Yu
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
High Quality ◽  
Quantum Well Structures ◽  
Mocvd Growth ◽  
Buried Heterostructure ◽  
Strained Quantum Well

AbstractWe report the results of the growth of InAsyP1−y /InP and In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 compressive strained multiple quantum wells (CSMQW) structures grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Our studies showed high quality 1.06 μm InAs0.21P0.79/InP CSMQW structure with 6 periods can be obtained when the growth temperature is around 650°C and the pressure in the reactor is about 20 Torr. When the well thickness and composition are tuned for wavelength around 1.30 μm, the quality of this structure degrades. By employing 1.1 μm wavelength, lattice-matched InGaAsP as the barrier layers and setting the growth temperature at 600 °C, high quality 1.30 μm wavelength In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW materials with 10 periods can also be obtained. The materials were characterized with high resolution x-ray rocking curves, room and low temperature photoluminescence (PL). The 15K full-width-at-half-maximums (FWHM) of the PL peaks for 1.06 μm InAs0.21P0.79/InP and 1.30 μm In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW structures are 5.6 meV and 4.97 meV, respectively, which are among the smallest FWHMs reported up to date for these kinds of MOCVD growth materials. Buried heterostructure lasers at 1.3 μm wavelength have been obtained with the CSMQWs as the active layer.

Low-pressure MOCVD growth of ZnTe and observation of gas reaction

Vacuum ◽  
1990 ◽  
Vol 41 (1-3) ◽  
pp. 715-717 ◽  
Author(s):  
M Nishio ◽  
H Ogawa ◽  
A Yoshida
Keyword(s):  
Low Pressure ◽  
Mocvd Growth ◽  
Low Pressure Mocvd

scholarly journals High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

2006 ◽  
Vol 55 (6) ◽  
pp. 2982
Author(s):  
Zhao Qian ◽  
Pan Jiao-Qing ◽  
Zhang Jing ◽  
Zhou Fan ◽  
Wang Bao-Jun ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Low Pressure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Patterned Substrates ◽  
High Quality ◽  
Low Pressure Mocvd
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