Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes

1996 ◽  
Author(s):  
Karl Schuell ◽  
Wolfgang Spahn ◽  
V. Hock ◽  
U. Lunz ◽  
M. Ehinger ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Ohmic Contacts ◽  
Laser Diodes ◽  
Green Laser ◽  
Thermal Stability Of

Optimization of Pd/Zn/Pd/Au Ohmic Contacts to p-Type inGaAs/ InP

1994 ◽  
Vol 337 ◽  
Author(s):  
Patrick W Leech ◽  
Geoffrey K. Reeves
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Critical Thickness ◽  
Specific Contact Resistance ◽  
Zn Doping ◽  
Specific Contact ◽  
P Type ◽  
Thermal Stability Of

ABSTRACTThe electrical properties of Pd/Zn/Pd/Au based ohmic contacts to p-type In0 47Ga0 53As/ InP with an interposed superlattice of 50Å In047Gao 53As/ 50 Å InP have been investigated. In this study, several configurations of the Pd/Zn/Pd/Au metallization were fabricated with varying thicknesses of the Zn and interfacial Pd layers in the range 0 to 400 Å. The lowest values of specific contact resistance, ρc, were 1.2 x 10-5 Ω cm2 as-deposited and 7.5 x 106 Ω cm2 for samples annealed at 500 °C. In the as-deposited structures, ρc was reduced by an increase in thickness of both the Zn and Pd layers to 300 Å. For annealed samples, a critical thickness of the Zn ≥ 50 Å and Pd ≥ 100 Å layers was required in order to significantly reduce the magnitude of ρc. These results are consistent with a model of Pd/Zn contacts based on Zn doping of the interface. Studies of thermal stability of the contacts at 400 °C and 500 °C have shown that the Zn/Pd/Au and Pd/Zn/Pd/Au configurations were significanty lower in ρc at extended ageing times than the Pd/Au contacts.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

scholarly journals Thermal stability of low-resistance Au Ohmic contacts to GeTe

2017 ◽  
Vol 621 ◽  
pp. 145-150 ◽  
Author(s):  
Haila M. Aldosari ◽  
Kayla A. Cooley ◽  
Shih-Ying Yu ◽  
Katherine C. Kragh-Buetow ◽  
Suzanne E. Mohney
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Thermal Stability Of

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation

2005 ◽  
Author(s):  
Takashi Yamamoto ◽  
Yukiko Izumi ◽  
Takashi Miyamoto ◽  
Hirohumi Seki ◽  
Hideki Hashimoto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Structural Change ◽  
Electrical Properties ◽  
Yttrium Aluminate ◽  
Thermal Stability Of
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