Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

2001 ◽  
Vol 7 (2) ◽  
pp. 242-248 ◽  
Author(s):  
N. Niskiyama ◽  
M. Arai ◽  
S. Shinada ◽  
M. Azuchi ◽  
T. Miyamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Highly Strained ◽  
Vertical Cavity

MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

2006 ◽  
Vol 287 (2) ◽  
pp. 550-553 ◽  
Author(s):  
Y.A. Chang ◽  
J.T. Chu ◽  
C.T. Ko ◽  
H.C. Kuo ◽  
C.F. Lin ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Mocvd Growth ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Highly Strained ◽  
Vertical Cavity

GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

1990 ◽  
Vol 2 (7) ◽  
pp. 456-458 ◽  
Author(s):  
Y.H. Wang ◽  
K. Tai ◽  
J.D. Wynn ◽  
M. Hong ◽  
R.J. Fischer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Cavity Surface ◽  
Multiple Quantum ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser

1992 ◽  
Vol 60 (15) ◽  
pp. 1830-1832 ◽  
Author(s):  
R. P. Schneider ◽  
R. P. Bryan ◽  
J. A. Lott ◽  
G. R. Olbright
Keyword(s):  
Quantum Well ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Strained Quantum Well ◽  
Vertical Cavity
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