TE/TM cross-polarization laser diodes using tensile-strained quantum wells

1996 ◽  
Author(s):  
Decai Sun ◽  
David P. Bour ◽  
K. J. Beernink ◽  
David W. Treat ◽  
Ross D. Bringans
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Cross Polarization ◽  
Strained Quantum Wells

High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells

1993 ◽  
Vol 63 (11) ◽  
pp. 1486-1488 ◽  
Author(s):  
Minoru Watanabe ◽  
John Rennie ◽  
Masaki Okajima ◽  
Gen‐ichi Hatakoshi
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Strained Quantum Wells ◽  
Multiquantum Well

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2334-2336 ◽  
Author(s):  
S. Mogg ◽  
N. Chitica ◽  
R. Schatz ◽  
M. Hammar
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Highly Strained

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

1999 ◽  
Vol 33 (9) ◽  
pp. 1007-1009
Author(s):  
Z. N. Sokolova ◽  
D. A. Vinokurov ◽  
I. S. Tarasov ◽  
N. A. Gun’ko ◽  
G. G. Zegrya
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Strained Quantum Wells

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content
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