Ammonothermal growth of bulk GaN crystals (Conference Presentation)

2018 ◽  
Author(s):  
Siddha Pimputkar
Keyword(s):  
Bulk Gan ◽  
Ammonothermal Growth

Ammonothermal growth of bulk GaN

2008 ◽  
Vol 310 (17) ◽  
pp. 3907-3910 ◽  
Author(s):  
Tadao Hashimoto ◽  
Feng Wu ◽  
James S. Speck ◽  
Shuji Nakamura
Keyword(s):  
Bulk Gan ◽  
Ammonothermal Growth

Improvement of crystal quality in ammonothermal growth of bulk GaN

2010 ◽  
Vol 312 (18) ◽  
pp. 2503-2506 ◽  
Author(s):  
Tadao Hashimoto ◽  
Edward Letts ◽  
Masanori Ikari ◽  
Yoshihiro Nojima
Keyword(s):  
Crystal Quality ◽  
Bulk Gan ◽  
Ammonothermal Growth

scholarly journals Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 356
Author(s):  
Saskia Schimmel ◽  
Daisuke Tomida ◽  
Tohru Ishiguro ◽  
Yoshio Honda ◽  
Shigefusa Chichibu ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Simulations ◽  
Numerical Models ◽  
Physical Models ◽  
Model Systems ◽  
Experimental Investigations ◽  
Process Conditions ◽  
Design And Optimization ◽  
Bulk Gan ◽  
Ammonothermal Growth

Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important semiconductor material. This review presents an overview of the literature on simulations targeting ammonothermal growth of GaN. Approaches for validation are also reviewed, and an overview of available methods and data is given. Fluid flow is likely in the transitional range between laminar and turbulent; however, the time-averaged flow patterns likely tend to be stable. Thermal boundary conditions both in experimental and numerical research deserve more detailed evaluation, especially when designing numerical or physical models of the ammonothermal growth system. A key source of uncertainty for calculations is fluid properties under the specific conditions. This originates from their importance not only in numerical simulations but also in designing similar physical model systems and in guiding the selection of the flow model. Due to the various sources of uncertainty, a closer integration of numerical modeling, physical modeling, and the use of measurements under ammonothermal process conditions appear to be necessary for developing numerical models of defined accuracy.

Transparent, conductive bulk GaN by high temperature ammonothermal growth

2015 ◽  
Vol 252 (5) ◽  
pp. 1069-1074 ◽  
Author(s):  
Wenkan Jiang ◽  
Dirk Ehrentraut ◽  
Jonathan Cook ◽  
Derrick S. Kamber ◽  
Rajeev T. Pakalapati ◽  
...  
Keyword(s):  
High Temperature ◽  
Bulk Gan ◽  
Ammonothermal Growth

Basic ammonothermal growth of bulk GaN single crystal using sodium mineralizers

2017 ◽  
Vol 478 ◽  
pp. 85-88 ◽  
Author(s):  
Jang Bo Shim ◽  
Gun Hwan Kim ◽  
Young Kuk Lee
Keyword(s):  
Single Crystal ◽  
Bulk Gan ◽  
Ammonothermal Growth

Ammonothermal growth of polar and non-polar bulk GaN crystal

2015 ◽  
Author(s):  
Yutaka Mikawa ◽  
Takayuki Ishinabe ◽  
Shinichiro Kawabata ◽  
Tae Mochizuki ◽  
Atsuhiko Kojima ◽  
...  
Keyword(s):  
Bulk Gan ◽  
Gan Crystal ◽  
Ammonothermal Growth

EXCITON INSULATOR STATES IN MATERIALS WITH ‘MEXICAN HAT’ BAND STRUCTURE DISPERSION AND IN GRAPHENE

2015 ◽  
Vol 11 (1) ◽  
pp. 2927-2949
Author(s):  
Lyubov E. Lokot
Keyword(s):  
Band Structure ◽  
Three Dimensional ◽  
Dimensional Sphere ◽  
Electron Hole ◽  
Dinger Equation ◽  
Fermi Sphere ◽  
Zinc Blende ◽  
Bulk Gan ◽  
Structure Dispersion ◽  
Excitonic States

In the paper a theoretical study the both the quantized energies of excitonic states and their wave functions in grapheneand in materials with "Mexican hat" band structure dispersion as well as in zinc-blende GaN is presented. An integral twodimensionalSchrödinger equation of the electron-hole pairing for a particles with electron-hole symmetry of reflection isexactly solved. The solutions of Schrödinger equation in momentum space in studied materials by projection the twodimensionalspace of momentum on the three-dimensional sphere are found exactly. We analytically solve an integral twodimensionalSchrödinger equation of the electron-hole pairing for particles with electron-hole symmetry of reflection. Instudied materials the electron-hole pairing leads to the exciton insulator states. Quantized spectral series and lightabsorption rates of the excitonic states which distribute in valence cone are found exactly. If the electron and hole areseparated, their energy is higher than if they are paired. The particle-hole symmetry of Dirac equation of layered materialsallows perfect pairing between electron Fermi sphere and hole Fermi sphere in the valence cone and conduction cone andhence driving the Cooper instability. The solutions of Coulomb problem of electron-hole pair does not depend from a widthof band gap of graphene. It means the absolute compliance with the cyclic geometry of diagrams at justification of theequation of motion for a microscopic dipole of graphene where >1 s r . The absorption spectrums for the zinc-blendeGaN/(Al,Ga)N quantum well as well as for the zinc-blende bulk GaN are presented. Comparison with availableexperimental data shows good agreement.

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