Transparent, conductive bulk GaN by high temperature ammonothermal growth

2015 ◽  
Vol 252 (5) ◽  
pp. 1069-1074 ◽  
Author(s):  
Wenkan Jiang ◽  
Dirk Ehrentraut ◽  
Jonathan Cook ◽  
Derrick S. Kamber ◽  
Rajeev T. Pakalapati ◽  
...  
Keyword(s):  
High Temperature ◽  
Bulk Gan ◽  
Ammonothermal Growth

Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN

2002 ◽  
Vol 246 (3-4) ◽  
pp. 244-251 ◽  
Author(s):  
T.H Myers ◽  
B.L VanMil ◽  
L.J Holbert ◽  
C.Y Peng ◽  
C.D Stinespring ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Damage ◽  
Hydrogen Annealing ◽  
Bulk Gan

Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Boundary Structure ◽  
Quantum Well Structures ◽  
Flat Surfaces ◽  
Grain Boundary Structure ◽  
Bulk Gan ◽  
Atomically Flat

AbstractVarious methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.

High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

2015 ◽  
Vol 15 (8) ◽  
pp. 4104-4109 ◽  
Author(s):  
Johannes K. Zettler ◽  
Christian Hauswald ◽  
Pierre Corfdir ◽  
Mattia Musolino ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Material Quality ◽  
Gan Nanowires ◽  
Bulk Gan

Package Design and Analysis for Vertical Gallium Nitride Field Effect Transistors

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000058-000063
Author(s):  
John Harris ◽  
David Huitink ◽  
Dan Ewing
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Development Stage ◽  
Wide Band Gap ◽  
Package Design ◽  
Bulk Gan ◽  
Effect Transistor

Abstract Gallium nitride (GaN) is a wide band gap semi-conductor with superior electron mobility to silicon carbide. These properties allow for the design of high temperature capable devices with excellent on resistance and breakdown voltage for their size. However, bulk GaN is difficult to fabricate and doping for field effect transistor (FET) control has been elusive, so vertical GaN devices are not commonplace. This paper measures the characteristics of vertical GaN FETs in the development stage and discusses packaging them for fabrication feedback and for future high temperature aplications.

Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure

2016 ◽  
Vol 449 ◽  
pp. 35-42 ◽  
Author(s):  
B. Sadovyi ◽  
A. Nikolenko ◽  
J.L. Weyher ◽  
I. Grzegory ◽  
I. Dziecielewski ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Bulk Gan

scholarly journals Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 484-489 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Boundary Structure ◽  
Quantum Well Structures ◽  
Flat Surfaces ◽  
Grain Boundary Structure ◽  
Bulk Gan ◽  
Atomically Flat

Various methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.

Ammonothermal growth of bulk GaN

2008 ◽  
Vol 310 (17) ◽  
pp. 3907-3910 ◽  
Author(s):  
Tadao Hashimoto ◽  
Feng Wu ◽  
James S. Speck ◽  
Shuji Nakamura
Keyword(s):  
Bulk Gan ◽  
Ammonothermal Growth
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