Ammonothermal growth of polar and non-polar bulk GaN crystal

2015 ◽  
Author(s):  
Yutaka Mikawa ◽  
Takayuki Ishinabe ◽  
Shinichiro Kawabata ◽  
Tae Mochizuki ◽  
Atsuhiko Kojima ◽  
...  
Keyword(s):  
Bulk Gan ◽  
Gan Crystal ◽  
Ammonothermal Growth

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

scholarly journals Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

2011 ◽  
Vol 37 (2-5) ◽  
pp. 467-477 ◽  
Author(s):  
Qi-Sheng Chen ◽  
Yan-Ni Jiang ◽  
Jun-Yi Yan ◽  
Wei Li ◽  
V. Prasad
Keyword(s):  
Growth Processes ◽  
Large Size ◽  
Gan Crystal ◽  
Ammonothermal Growth

The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality

RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51201-51207 ◽  
Author(s):  
Lin Shang ◽  
Taiping Lu ◽  
Guangmei Zhai ◽  
Zhigang Jia ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Chemical Vapor ◽  
Crystal Quality ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Bulk Gan ◽  
Metal Organic ◽  
Step Growth ◽  
Gan Crystal

The role of the nucleation layer thickness on the GaN crystal quality grown by metal organic chemical vapor deposition is explored.

Growth of bulk GaN Crystal by Na Flux Method

2013 ◽  
Author(s):  
Y. Mori ◽  
M. Imade ◽  
M. Maruyama ◽  
M. Yoshimura
Keyword(s):  
Flux Method ◽  
Bulk Gan ◽  
Gan Crystal

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method

2008 ◽  
Vol 600-603 ◽  
pp. 1245-1250 ◽  
Author(s):  
Fumio Kawamura ◽  
Hidekazu Umeda ◽  
Masanori Morishita ◽  
Ryohei Gejo ◽  
Masaki Tanpo ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Secondary Ion Mass Spectrometry ◽  
Impurity Content ◽  
Single Crystal Substrate ◽  
Flux Method ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Apparatus ◽  
Metal Flux ◽  
Gan Crystal

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5034-5037 ◽  
Author(s):  
Masaru Kamano ◽  
Masanobu Haraguchi ◽  
Takahiro Niwaki ◽  
Masuo Fukui ◽  
Minoru Kuwahara ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Temperature Dependence ◽  
Phonon Scattering ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Scattering Time
Sign in / Sign up

Export Citation Format

Share Document