An ultra-low dark current CMOS image sensor cell using n/sup +/ ring reset

2002 ◽  
Vol 23 (9) ◽  
pp. 538-540 ◽  
Author(s):  
Hsiu-Yu Cheng ◽  
Ya-Chin King
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Cell

Research status of dark current in CMOS image sensor

2021 ◽  
Author(s):  
Lei Yan ◽  
feng shi ◽  
hongchang cheng ◽  
ye yang ◽  
bin ren ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Research Status

scholarly journals Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

2020 ◽  
Vol 67 (7) ◽  
pp. 1241-1250
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jean-Marc Belloir ◽  
Serena Rizzolo ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Random Telegraph Signal ◽  
Doping Element ◽  
Radiation Induced

scholarly journals Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6620
Author(s):  
Ayumi Onaka-Masada ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ryo Hirose ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Oxygen Concentration ◽  
Epitaxial Layer ◽  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Device Fabrication ◽  
White Spot ◽  
Epitaxial Silicon ◽  
Ion Implanted

The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

Optimization of The Ultra-Low Dark Current Complementary MOS Image Sensor Cell Using n+ Ring Reset

2004 ◽  
Vol 43 (4B) ◽  
pp. 1734-1736
Author(s):  
Po-Hao Huang ◽  
Hsiu-Yu Cheng ◽  
Wen-Jen Chiang ◽  
Cheng-Hsiao Lai ◽  
Ya-Chin King
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Sensor Cell

scholarly journals Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1106
Author(s):  
Su-Young Chai ◽  
Sung-Hoon Choa
Keyword(s):  
Dark Current ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
State Density ◽  
Oxide Semiconductor ◽  
Fluorine Concentration ◽  
Current Characteristics ◽  
Minority Carriers

Recently, the demand of a high resolution complementary metal-oxide semiconductor (CMOS) image sensor is dramatically increasing. As the pixel size reduces to submicron, however, the quality of the sensor image decreases. In particular, the dark current can act as a large noise source resulting in reduction of the quality of the sensor image. Fluorine ion implantation was commonly used to improve the dark current by reducing the trap state density. However, the implanted fluorine diffused to the outside of the silicon surface and disappeared after annealing process. In this paper, we analyzed the effects of carbon implantation on the fluorine diffusion and the dark current characteristics of the CMOS image sensor. As the carbon was implanted with dose of 5.0 × 1014 and 1 × 1015 ions/cm2 in N+ area of FD region, the retained dose of fluorine was improved by more than 131% and 242%, respectively than no carbon implantation indicating that the higher concentration of the carbon implantation, the higher the retained dose of fluorine after annealing. As the retained fluorine concentration increased, the minority carriers of electrons or holes decreased by more Si-F bond formation, resulting in increasing the sheet resistance. When carbon was implanted with 1.0 × 1015 ions/cm2, the defective pixel, dark current, transient noise, and flicker were much improved by 25%, 9.4%, 1%, and 28%, respectively compared to no carbon implantation. Therefore, the diffusion of fluorine after annealing could be improved by the carbon implantation leading to improvement of the dark current characteristics.

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