Research VIS-NIR optical constants of Si films deposited by different techniques

2018 ◽  
Author(s):  
Dandan Liu ◽  
Huasong Liu ◽  
Yiqin Ji ◽  
Yugang Jiang ◽  
Yuzhe Xing ◽  
...  
Keyword(s):  
Optical Constants ◽  
Si Films

Detection of an ordered-structure fraction in amorphous silicon

2016 ◽  
Vol 49 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Xiao-Dong Wang ◽  
Bo Chen ◽  
Hai-Feng Wang ◽  
Xin Zheng ◽  
Shi-Jie Liu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Ordered Structure ◽  
Radio Frequency Magnetron Sputtering ◽  
Medium Range Order ◽  
Medium Range ◽  
Si Films

Amorphous silicon (a-Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered-structure fraction in a-Si. The SE analysis of a-Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium-range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a-Si in the range of 1.5–5.0 eV.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Development of 200kV ultrahigh-resolution analytical electron microscope

1989 ◽  
Vol 47 ◽  
pp. 108-109
Author(s):  
T. Kaneyama ◽  
M. Naruse ◽  
Y. Ishida ◽  
M. Kersker
Keyword(s):  
Electron Microscope ◽  
Optical Constants ◽  
Materials Science ◽  
Objective Lens ◽  
The Finite Element Method ◽  
Ultrahigh Resolution ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Characteristic Features ◽  
Better Than

In the field of materials science, the importance of the ultrahigh resolution analytical electron microscope (UHRAEM) is increasing. A new UHRAEM which provides a resolution of better than 0.2 nm and allows analysis of a few nm areas has been developed. [Fig. 1 shows the external view] The followings are some characteristic features of the UHRAEM.Objective lens (OL)Two types of OL polepieces (URP for ±10' specimen tilt and ARP for ±30' tilt) have been developed. The optical constants shown in the table on the next page are figures calculated by the finite element method. However, Cs was experimentally confirmed by two methods (namely, Beam Tilt method and Krivanek method) as 0.45 ∼ 0.50 mm for URP and as 0.9 ∼ 1.0 mm for ARP, respectively. Fig. 2 shows an optical diffractogram obtained from a micrograph of amorphous carbon with URP under the Scherzer defocus condition. It demonstrates a resolution of 0.19 nm and a Cs smaller than 0.5 mm.

MICROELECTRONICS APPLICATIONS OF DEPOSITED Si FILMS RECRYSTALLIZED FROM THE MELT

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-353-C1-362
Author(s):  
G. K. Celler ◽  
L. E. Trimble
Keyword(s):  
Si Films

OPTICAL CONSTANTS OF LAYER STRUCTURES FROM ELLIPSOMETRIC DATA

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-31-C10-34
Author(s):  
S. Logothetidis ◽  
J. Spyridelis
Keyword(s):  
Optical Constants ◽  
Layer Structures

TRANSPORT PROPERTIES OF COMPENSATED a-Si FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-103-C4-106
Author(s):  
W. Beyer ◽  
H. Mell ◽  
H. Overhof
Keyword(s):  
Transport Properties ◽  
Si Films

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

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