Photoelectric properties of (n)InSb-(n)GaAs thin-film heterojunctions, and InAs1-xSbx thin layers obtained by laser-pulse deposition method

1994 ◽  
Author(s):  
A. G. Alexanian
Keyword(s):  
Thin Film ◽  
Laser Pulse ◽  
Thin Layers ◽  
Deposition Method ◽  
Photoelectric Properties ◽  
Pulse Deposition

Development of a novel cathodic deposition method for thin-film metal azolate frameworks toward Cd2+ adsorption

2021 ◽  
Vol 299 ◽  
pp. 122177
Author(s):  
Jie Ding ◽  
Xiaoxuan Yuan ◽  
Jinfeng Wang ◽  
Wenfeng Mao ◽  
Jianzhong Huo ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Method ◽  
Cathodic Deposition

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

Photoelectric properties of chalcogenide glass thin film heterostructures

1976 ◽  
Vol 34 (1) ◽  
pp. 51-53 ◽  
Author(s):  
D. Ležal ◽  
I. Srb ◽  
F. Šrobár ◽  
V. Šmíd ◽  
J. Míšek
Keyword(s):  
Thin Film ◽  
Chalcogenide Glass ◽  
Photoelectric Properties

The influence of scattering layer thin film on photoelectric properties of Bi2S3/CdS/TiO2 electrode

Vacuum ◽  
2019 ◽  
Vol 161 ◽  
pp. 21-28 ◽  
Author(s):  
Pin Lv ◽  
Hairui Sun ◽  
Haibin Yang ◽  
Wuyou Fu ◽  
Bingqiang Cao ◽  
...  
Keyword(s):  
Thin Film ◽  
Tio2 Electrode ◽  
Scattering Layer ◽  
Photoelectric Properties ◽  
Layer Thin Film

CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 667-670 ◽  
Author(s):  
Y. RODRÍGUEZ-LAZCANO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Band Gap ◽  
Deposition Method ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Ternary Compounds ◽  
Glass Substrates ◽  
Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

Rectifying Behavior of Aligned ZnO Nanorods on Mg0.3Zn0.7O Thin Film Template

2011 ◽  
Vol 364 ◽  
pp. 35-39 ◽  
Author(s):  
Salina Muhamad ◽  
Abu Bakar Suriani ◽  
Mohamad Hafiz Mamat ◽  
Rafidah Ahmad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Zno Nanorods ◽  
Thermionic Emission ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hexagonal Shape ◽  
Semiconductor Junction ◽  
Vertically Aligned ◽  
Scanning Electron

Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nanorods grown on Mg0.3Zn0.7O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crytallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nanorods was discussed in further details.

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