In-depth analysis and characterization of a dual damascene process with respect to different CD

2018 ◽  
Author(s):  
Boris Habets ◽  
Gerd Krause ◽  
Detlef Hofmann ◽  
Stefan Buhl ◽  
Manuela Gutsch ◽  
...  
Keyword(s):  
Dual Damascene ◽  
Damascene Process ◽  
Depth Analysis

Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Experimental Characterization ◽  
Contact Lines ◽  
Tree Structures ◽  
Similar Test ◽  
Dual Damascene ◽  
Copper Interconnect ◽  
Test Conditions

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

Inorganic Si-O-C Antireflection Coating at 193 nm for Cu Dual Damascene Process

2003 ◽  
Vol 150 (1) ◽  
pp. G58 ◽  
Author(s):  
Sang-Yun Lee ◽  
Yong-Bae Kim ◽  
Jeong Soo Byun
Keyword(s):  
Antireflection Coating ◽  
Dual Damascene ◽  
Damascene Process ◽  
193 Nm

scholarly journals Gatekeepers of the fetus: Characterization of placental macrophages

2020 ◽  
Vol 218 (1) ◽  
Author(s):  
Christina Megli ◽  
Carolyn B. Coyne
Keyword(s):  
Immune Cells ◽  
Depth Analysis ◽  
Hofbauer Cells ◽  
Placental Macrophages ◽  
Maternal Fetal Interface

In this issue of JEM, Thomas et al. (https://doi.org/10.1084/jem.20200891) provide elegant technological and conceptual advances that further our understanding of the immune cells enriched at the maternal–fetal interface. Using new isolation strategies to better separate maternal- and fetal-derived cells, the authors identify previously undefined maternal-derived immune cells associated with the fetal-derived placenta and provide an in-depth analysis of the markers and characteristics of placental Hofbauer cells.

MEMS Pressure Sensor Array for Aeroacoustic Analysis of the Turbulent Boundary Layer

2008 ◽  
Author(s):  
Joshua S. Krause ◽  
Robert D. White ◽  
Mark J. Moeller ◽  
Judith M. Gallman ◽  
Richard De Jong
Keyword(s):  
Pressure Sensor ◽  
Sensor Array ◽  
Single Element ◽  
Lumped Element ◽  
Depth Analysis ◽  
Fluid Damping ◽  
Sensitivity Studies ◽  
Gain Stage ◽  
Acoustic Sensitivity

The design, fabrication, and characterization of a surface micromachined, front-vented, 64 channel (8×8), capacitively sensed pressure sensor array is described. The array was fabricated using the MEMSCAP PolyMUMPs® process, a three layer polysilicon surface micromachining process. An acoustic lumped element circuit model was used to design the system. The results of our computations for the design, including mechanical components, environmental loading, fluid damping, and other acoustic elements are detailed. Theory predicts single element sensitivity of 1 mV/Pa at the gain stage output in the 400–40,000 Hz band. A laser Doppler velocimetry (LDV) system has been used to map the spatial motion of the elements in response to electrostatic excitation. A strong resonance appears at 480 kHz for electrostatic excitation, in good agreement with mathematical models. Static stiffness measured electrostatically using an interferometer is 0.1 nm/V2, similar to the expected stiffness. Preliminary acoustic sensitivity studies show single element acoustic sensitivity (as a function of frequency) increasing from 0.01 mV/Pa at 200 Hz to 0.16 mV/Pa at 2 kHz. A more in depth analysis of acoustic sensitivity is ongoing.

scholarly journals Identification and Structural Characterization of Unidentified Impurity in Bisoprolol Film-Coated Tablets

2017 ◽  
Vol 2017 ◽  
pp. 1-16 ◽  
Author(s):  
Ivana Mitrevska ◽  
Ema Kikovska-Stojanovska ◽  
Gjorgji Petrusevski ◽  
Marina Chachorovska ◽  
Suzan Memed-Sejfulah ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Structural Characterization ◽  
Drug Product ◽  
Parent Compound ◽  
Relative Molecular Mass ◽  
Full Characterization ◽  
Depth Analysis ◽  
Structural Alerts ◽  
Ionization Mode

The aim of this study is the identification, structural characterization, and qualification of a degradation impurity of bisoprolol labeled as Impurity RRT 0.95. This degradation product is considered as a principal thermal degradation impurity identified in bisoprolol film-coated tablets. The impurity has been observed in the stress thermal degradation study of the drug product. Using HPLC/DAD/ESI-MS method, a tentative structure was assigned and afterwards confirmed by detailed structural characterization using NMR spectroscopy. The structure of the target Impurity RRT 0.95 was elucidated as phosphomonoester of bisoprolol, having relative molecular mass of 406 (positive ionization mode). The structural characterization was followed by qualification of Impurity RRT 0.95 using several different in silico methodologies. From the results obtained, it can be concluded that no new structural alerts have been generated for Impurity RRT 0.95 relative to the parent compound bisoprolol. The current study presents an in-depth analysis of the full characterization and qualification of an unidentified impurity in a drug product with the purpose of properly defining the quality specification of the product.

Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process

2000 ◽  
Author(s):  
Soo Gun Lee ◽  
Hyeok-Sang Oh ◽  
Hong-Jae Shin ◽  
Jin-Gi Hong ◽  
Hyeon-Deok Lee ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Dual Damascene ◽  
Damascene Process ◽  
Diffusion Barrier Layer ◽  
Cu Diffusion Barrier
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