Characterization of FBG reflector arrays by wavelength tuning of a pulsed DFB laser

2000 ◽  
Author(s):  
Han-Sun Choi
Keyword(s):  
Wavelength Tuning ◽  
Dfb Laser

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1998 ◽  
Vol 537 ◽  
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

AbstractWe present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

scholarly journals Enlargement of the organic solid-state DFB laser wavelength tuning range by the use of two complementary luminescent dyes doped into the host matrix

2017 ◽  
Vol 19 (27) ◽  
pp. 18068-18075 ◽  
Author(s):  
Kacper Parafiniuk ◽  
Lech Sznitko ◽  
Dominika Wawrzynczyk ◽  
Andrzej Miniewicz ◽  
Jaroslaw Mysliwiec
Keyword(s):  
Solid State ◽  
Tuning Range ◽  
Laser Wavelength ◽  
Polymeric Matrix ◽  
Wavelength Tuning ◽  
Molecular Aggregates ◽  
Host Matrix ◽  
Organic Solid ◽  
Dfb Laser ◽  
Organic Solid State

Broad range tunable DFB lasing was achieved by the utilization of two dyes forming molecular aggregates within the polymeric matrix.

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1999 ◽  
Vol 4 (S1) ◽  
pp. 69-74
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1.1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

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