<title>Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser</title>

A 10-Gb/s optical transmitter module with a monolithically integrated electroabsorption modulator with a DFB laser

IEEE Photonics Technology Letters ◽

10.1109/68.62022 ◽

1990 ◽

Vol 2 (12) ◽

pp. 896-898 ◽

Cited By ~ 12

Author(s):

M. Goto ◽

K. Hironishi ◽

A. Sugata ◽

K. Mori ◽

T. Horimatsu ◽

...

Keyword(s):

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Optical Transmitter ◽

Dfb Laser

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Photonic mixing using a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153) ◽

10.1109/mwp.1996.662095 ◽

2002 ◽

Cited By ~ 1

Author(s):

J. Onnegren ◽

J. Svedin

Keyword(s):

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Dfb Laser

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Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.518909 ◽

2002 ◽

Cited By ~ 1

Author(s):

A. Ramdane ◽

A. Ougazzaden ◽

F. Devaux ◽

F. Delorme ◽

M. Schneider ◽

...

Keyword(s):

Active Layer ◽

High Performance ◽

Electroabsorption Modulator ◽

Strained Layer ◽

Monolithically Integrated ◽

Dfb Laser

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Application of a lambda /4-shifted DFB laser/electroabsorption modulator monolithically integrated light source to single-chip pulse generator with variable repetition rate

IEEE Photonics Technology Letters ◽

10.1109/68.163755 ◽

1992 ◽

Vol 4 (10) ◽

pp. 1129-1132 ◽

Cited By ~ 15

Author(s):

M. Suzuki ◽

H. Tanaka ◽

Y. Matsushima

Keyword(s):

Light Source ◽

Repetition Rate ◽

Pulse Generator ◽

Single Chip ◽

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Dfb Laser ◽

Integrated Light Source

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Zero-bias and low-chirp, monolithically integrated 10 Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate

Electronics Letters ◽

10.1049/el:19960079 ◽

1996 ◽

Vol 32 (2) ◽

pp. 120 ◽

Cited By ~ 8

Author(s):

O. Sahlén ◽

L. Lundqvist ◽

S. Funke

Keyword(s):

Zero Bias ◽

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Inp Substrate ◽

Dfb Laser

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DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156496000220 ◽

1996 ◽

Vol 07 (03) ◽

pp. 409-428

Author(s):

YI LUO ◽

WEI WANG

Keyword(s):

Semiconductor Lasers ◽

Distributed Feedback ◽

Device Structure ◽

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Integrated Devices ◽

Dfb Laser ◽

Integrated Device ◽

First Time ◽

Multi Quantum Well

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.

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