Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

1991 ◽  
Vol 230 ◽  
Author(s):  
A. Pignolet ◽  
P. E. Schmid ◽  
L. Wang ◽  
F. Lévy
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Amorphous Films ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

AbstractPure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

Epitaxial Growth and Electrical Characterization of PBZT Thin Films by RF Magnetron Sputtering Deposition

2007 ◽  
Vol 336-338 ◽  
pp. 173-176
Author(s):  
Hui Qing Fan ◽  
Lai Jun Liu ◽  
Xiu Li Chen ◽  
Jie Zhang ◽  
Wei Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Pyrochlore Phase ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Sputtering Deposition ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P~E).

Microstructural Changes During Processing of Laser-Deposited BaTiO3 and Pzt Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. P. Cook ◽  
M. D. Vaudin ◽  
P. K. Schenck ◽  
W. Wong-Ng ◽  
C. K. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Scanning Calorimetry ◽  
Microstructural Changes ◽  
X Ray ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

ABSTRACTThin films of BaTiO3 and PZT (lead zirconate titanate, 47%PbTiO3, 53%PbZrO3) have been produced by laser irradiation of the appropriate ceramic targets and deposition of the ejected and vaporized material on planar substrates. The microstructural changes during thermal processing of these films have been studied by scanning electron microscopy/energy dispersive x-ray spectrometry (SEM/EDX), transmission electron microscopy (TEM), differential scanning calorimetry (DSC), x-ray diffraction (XRD), and by measurement of electrical properties. Films have been deposited using both Nd/YAG and excimer lasers and on unheated as well as heated substrates. Excimer films are considerably smoother than the Nd/YAG films, and the uniformity of the as-deposited microstructures is promoted by substrate heating. However, ferroelectric hysteresis loops were only observed for the considerably less smooth Nd/YAG PZT films; thermal treatment did little to improve the smoothness of these films. An excimer BaTiO3 film deposited on a heated substrate showed crystallographic alignment and had a dielectric constant of −100. Efforts are underway to combine the best features of films produced by both methods.

scholarly journals Hafnium Zirconium Oxide Thin Films for CMOS Compatible Pyroelectric Infrared Sensors

2021 ◽  
Vol 6 (1) ◽  
pp. 27
Author(s):  
Clemens Mart ◽  
Malte Czernohorsky ◽  
Kati Kühnel ◽  
Wenke Weinreich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Cost Effective ◽  
Atomic Layer ◽  
Lead Zirconate ◽  
Temperature Oscillation ◽  
Current Profile ◽  
Infrared Sensors ◽  
Integrated Sensor ◽  
Ferroelectric Hysteresis

Pyroelectric infrared sensors are often based on lead-containing materials, which are harmful to the environment and subject to governmental restrictions. Ferroelectric Hf1−xZrxO2 thin films offer an environmentally friendly alternative. Additionally, CMOS integration allows for integrated sensor circuits, enabling scalable and cost-effective applications. In this work, we demonstrate the deposition of pyroelectric thin films on area-enhanced structured substrates via thermal atomic layer deposition. Scanning electron microscopy indicates a conformal deposition of the pyroelectric film in the holes with a diameter of 500 nm and a depth of 8 μm. By using TiN electrodes and photolithography, capacitor structures are formed, which are contacted via the electrically conductive substrate. Ferroelectric hysteresis measurements indicate a sizable remanent polarization of up to 331 μC cm−2, which corresponds to an area increase of up to 15 by the nanostructured substrate. For pyroelectric analysis, a sinusoidal temperature oscillation is applied to the sample. Simultaneously, the pyroelectric current is monitored. By assessing the phase of the measured current profile, the pyroelectric origin of the signal is confirmed. The devices show sizable pyroelectric coefficients of −475 μC m−2 K−1, which is larger than that of lead zirconate titanate (PZT). Based on the experimental evidence, we propose Hf1−xZrxO2 as a promising material for future pyroelectric applications.

Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions

1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3600-3603 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Katsuhiro Aoki ◽  
Yukio Fukuda
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Zirconate Titanate

Characterization of seeded sol–Gel lead zirconate titanate thin films

1999 ◽  
Vol 19 (6-7) ◽  
pp. 1403-1407 ◽  
Author(s):  
Aiying Wu ◽  
Paula M. Vilarinho ◽  
Isabel M.Miranda Salvado ◽  
João L. Baptista ◽  
C.M. de Jesus ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate

Characterization of Switching Properties of Lead-Zirconate-Titanate Thin Films in Ti-Rich Phase

1998 ◽  
Vol 37 (Part 2, No. 5A) ◽  
pp. L522-L524 ◽  
Author(s):  
Katsuhiro Aoki ◽  
Tomoyuki Sakoda ◽  
Yukio Fukuda
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Rich Phase ◽  
Zirconate Titanate

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Physicochemical Properties of Rf Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
E. Catitan ◽  
B. Agius ◽  
H. Achard ◽  
J.P. Joly ◽  
J.C. Cheang Wong ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Deuteron Beam ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Zirconate Titanate ◽  
Kinetics Of

AbstractLead zirconate titanate thin films have been grown by rf magnetron sputtering an oxide target of nominal composition [Pb(Zr0.55,Ti0.45)O3 or PZT] in argon. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative and absolute cation and oxygen compositions of the thin films were determined by a new method based on the simultaneous use of Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) induced by a deuteron beam. The conditions for the deposition at room temperature of stoichiometric PZT films were established.

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