Laser Densification of Sol-Gel Derived TiO2 - Thin Films.

1992 ◽  
Vol 271 ◽  
Author(s):  
N. Arfsten ◽  
B. Lintner ◽  
M. Heming ◽  
O. Anderson ◽  
C. R. Otter-Mann

ABSTRACTLaser substrate heating is discussed as an alternative for the densification of sol -gel thin films. Homogeneous films of n(550 nm) = 2.30 could be obtained, keeping the bulk substrate temperature below 80 °C.

2019 ◽  
Vol 7 (1) ◽  
pp. 28
Author(s):  
KOMARAIAH DURGAM ◽  
RADHA EPPA ◽  
REDDY M. V. RAMANA ◽  
KUMAR J. SIVA ◽  
R. SAYANNA ◽  
...  

2011 ◽  
Vol 10 (2) ◽  
pp. 187-192 ◽  
Author(s):  
Ramona-Crina Suciu ◽  
Marcela Corina Rosu ◽  
Teofil Danut Silipas ◽  
Emil Indrea ◽  
Violeta Popescu ◽  
...  

2017 ◽  
Author(s):  
Siti Noraini Abu Bakar ◽  
Huda Abdullah ◽  
Kamisah Mohamad Mahbor

2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.


2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.


1999 ◽  
Author(s):  
Yongxiang Li ◽  
Muralihar K. Ghantasala ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski

1998 ◽  
Vol 326 (1-2) ◽  
pp. 238-244 ◽  
Author(s):  
M.Z. Atashbar ◽  
H.T. Sun ◽  
B. Gong ◽  
W. Wlodarski ◽  
R. Lamb

2002 ◽  
Vol 153 (1-3) ◽  
pp. 211-219 ◽  
Author(s):  
Jimmy C Yu ◽  
Hung Yuk Tang ◽  
Jiaguo Yu ◽  
H.C Chan ◽  
Lizhi Zhang ◽  
...  

2011 ◽  
Vol 44 (3) ◽  
pp. 550-554 ◽  
Author(s):  
Jianjun Tian ◽  
Hongmei Deng ◽  
Lin Sun ◽  
Hui Kong ◽  
Pingxiong Yang ◽  
...  

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