Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)

2018 ◽  
Author(s):  
Wiebke Hahn ◽  
Jean-Marie Lentali ◽  
Petr Polovodov ◽  
Nathan Young ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Evidence ◽  
Nanometer Scale

scholarly journals Experimental evidence of exciton wavefunction shrinkage in InxGa1-xAs/InP multi quantum wells

1993 ◽  
Vol 03 (C5) ◽  
pp. 315-318
Author(s):  
B. ROTELLI ◽  
C. ARENA ◽  
L. TARRICONE ◽  
C. RIGO
Keyword(s):  
Quantum Wells ◽  
Experimental Evidence

Carrier relaxation in InGaN∕GaN quantum wells with nanometer-scale cluster structures

2004 ◽  
Vol 85 (8) ◽  
pp. 1371-1373 ◽  
Author(s):  
Hsiang-Chen Wang ◽  
Shih-Chun Lin ◽  
Yen-Chen Lu ◽  
Yung-Chen Cheng ◽  
C. C. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nanometer Scale ◽  
Carrier Relaxation

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

Experimental evidence of asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

2002 ◽  
Vol 81 (13) ◽  
pp. 2460-2462 ◽  
Author(s):  
A. F. G. Monte ◽  
S. W. da Silva ◽  
J. M. R. Cruz ◽  
P. C. Morais ◽  
A. S. Chaves
Keyword(s):  
Quantum Wells ◽  
Experimental Evidence ◽  
Carrier Transport ◽  
Inp Substrates

scholarly journals Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

2015 ◽  
Vol 106 (18) ◽  
pp. 183901 ◽  
Author(s):  
Jean Rodière ◽  
Laurent Lombez ◽  
Alain Le Corre ◽  
Olivier Durand ◽  
Jean-François Guillemoles
Keyword(s):  
Solar Cell ◽  
Quantum Wells ◽  
Experimental Evidence ◽  
Hot Carriers

scholarly journals Experimental evidence of nanometer-scale confinement of plasmonic eigenmodes responsible for hot spots in random metallic films

2013 ◽  
Vol 88 (11) ◽  
Author(s):  
Arthur Losquin ◽  
Sophie Camelio ◽  
David Rossouw ◽  
Mondher Besbes ◽  
Frédéric Pailloux ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Hot Spots ◽  
Nanometer Scale ◽  
Metallic Films

Experimental evidence of the exciton centre-of-mass quantization in Zn1−x Cd x Se/ZnSe multiple quantum wells

1995 ◽  
Vol 17 (11-12) ◽  
pp. 1473-1479
Author(s):  
D. Greco ◽  
R. Cingolani ◽  
A. D'Andrea ◽  
L. Tommasini ◽  
L. Vanzetti ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Evidence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Centre Of Mass
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