Experimental evidence of asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

2002 ◽  
Vol 81 (13) ◽  
pp. 2460-2462 ◽  
Author(s):  
A. F. G. Monte ◽  
S. W. da Silva ◽  
J. M. R. Cruz ◽  
P. C. Morais ◽  
A. S. Chaves
Keyword(s):  
Quantum Wells ◽  
Experimental Evidence ◽  
Carrier Transport ◽  
Inp Substrates

Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

2003 ◽  
Vol 17 ◽  
pp. 169-171 ◽  
Author(s):  
A.F.G. Monte ◽  
S.W. da Silva ◽  
J.M.R. Cruz ◽  
P.C. Morais ◽  
A.S. Chaves
Keyword(s):  
Quantum Wells ◽  
Carrier Transport ◽  
Inp Substrates

Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inp Substrates

scholarly journals Experimental evidence of exciton wavefunction shrinkage in InxGa1-xAs/InP multi quantum wells

1993 ◽  
Vol 03 (C5) ◽  
pp. 315-318
Author(s):  
B. ROTELLI ◽  
C. ARENA ◽  
L. TARRICONE ◽  
C. RIGO
Keyword(s):  
Quantum Wells ◽  
Experimental Evidence

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

2016 ◽  
Vol 25 (11) ◽  
pp. 117803 ◽  
Author(s):  
Haiyan Wu ◽  
Ziguang Ma ◽  
Yang Jiang ◽  
Lu Wang ◽  
Haojun Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Direct Observation ◽  
Transport Process ◽  
Carrier Transport ◽  
Pn Junction ◽  
Ingan Quantum Wells

Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates

2007 ◽  
Vol 40 (24) ◽  
pp. 7656-7661 ◽  
Author(s):  
J Y T Huang ◽  
D P Xu ◽  
J H Park ◽  
L J Mawst ◽  
T F Kuech ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Inp Substrates

Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates

1993 ◽  
Vol 48 (11) ◽  
pp. 8102-8118 ◽  
Author(s):  
Mitsuru Sugawara ◽  
Niroh Okazaki ◽  
Takuya Fujii ◽  
Susumu Yamazaki
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Structures ◽  
Inp Substrates
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